半导体烘烤工艺热分布研究  

Research on Heat Distribution of Semiconductor Baking Process

作　　者：汪钢 袁宁丰 朴寿庆 Wang Gang;Yuan Ning-feng;Piao Shou-qing(Ningbo ALLSEMI Co.,LTD.,Ningbo 315400,Zhejiang Province,China)

机构地区：[1]宁波润华全芯微电子设备有限公司,浙江宁波315400

出　　处：《科学与信息化》2024年第20期93-98,共6页Technology and Information

摘　　要：在半导体领域,热处理技术有着广泛的应用。在烘烤过程中热板的温度均匀性直接影响晶圆热处理的质量,本文将针对热处理在半导体烘烤领域的应用做深入研究。文章以载有晶圆的腔体结构为研究对象,从结构设计、仿真分析及算法控制等方面详细阐述晶圆表面温度分布情况及影响因素。在仿真过程中去除部分对结果影响不大的孔及支撑柱,从而简化仿真模型,并分别设定各个区域的功率;在温度控制方面采用多分区温度控制方法进行PID算法控制。In the field of semiconductors,heat treatment technology has been widely applied.The temperature uniformity of the hot plate during the baking process directly affects the quality of wafer heat treatment.This article will conduct in-depth research on the application of heat treatment in the field of semiconductor baking.This article takes the cavity structure containing wafers as the research object,and elaborates on the wafer surface temperature distribution and influencing factors from the aspects of structural design,simulation analysis,and algorithm control.During the simulation process,some holes and support columns that have little impact on the results are removed,thereby simplifying the simulation model and setting the power of each region separately.In terms of temperature control,a multi-zone temperature control method is used for PID algorithm control.

关 键 词：烘烤 温度均匀性 结构设计 算法控制 

分 类 号：TG1[金属学及工艺—金属学]