单片并联式半导体桥换能元能量转换效率影响因素分析  

Analysis of Factors Influencing the Energy Conversion Efficiency of Single Chip Parallel Semiconductor Bridge Transducers

作　　者：贺孝严 韩忠博 顾伯南 徐建勇 石伟 叶家海[1,2] 俞春培 张文超 HE Xiao-yan;HAN Zhong-bo;GU Bo-nan;XU Jian-yong;SHI Wei;YE Jia-hai;YU Chun-pei;ZHANG Wen-chao(School of Chemistry and Chemical Engineering,Nanjing University of Science and Technology,Nanjing,210094;Key Laboratory of Micro/Nano Energetic Devices,Ministry of Industry and Information Technology,Nanjing,210094)

机构地区：[1]南京理工大学化学与化工学院,江苏南京210094 [2]微纳含能器件工业和信息化部重点实验室,江苏南京210094

出　　处：《火工品》2024年第5期54-58,共5页Initiators & Pyrotechnics

基　　金：国家自然科学基金(No.22275091,No.22205112,No.U2341249)。

摘　　要：为了研究激励能量和桥区结构对半导体桥换能元能量转换效率的影响,设计了两种不同单片并联式桥区结构的半导体桥换能元,并在电容激励条件下进行测试,以评估并联式桥区结构的能量转换效率,进一步得到电压、桥区面积对能量转换效率的影响规律。试验结果表明:在47μF电容和25~35 V充电电压条件下,双桥区并联结构的能量转换效率略优于三桥区并联结构。在同一电容激励条件下,同一桥区结构半导体桥换能元的能量转换效率随着充电电压的增加而降低;在相同充电电压下,同一桥区结构半导体桥换能元的能量转换效率随着桥区面积的增大而提高。In order to investigate the influence of excitation energy and bridge area structure on the energy conversion efficiency of semiconductor bridge transducers,two types of semiconductor bridge transducers with different single-chip parallel bridge structures were designed,and the tests were carried out under capacitive excitation conditions to evaluate the energy conversion efficiency of the parallel bridge area structure,then the influences of voltage and bridge area on energy conversion efficiency were further revealed.The test results indicate that under the conditions of 47μF capacitance and 25~35 V charging voltage,the energy conversion efficiency of the dual-bridge area parallel structure is slightly better than that of the triple-bridge area parallel structure.Under the same capacitance excitation condition,the energy conversion efficiency of the semiconductor bridges with same bridge area structure decreases with the increase of charging voltage;Under the same charging voltage condition,the energy conversion efficiency of semiconductor bridges with same bridge area structure increases with the increase of bridge area.

关 键 词：半导体桥 换能元 并联式桥区 能量转换效率 电容激励 

分 类 号：TJ450.3[兵器科学与技术—火炮、自动武器与弹药工程]