Paraelectric Doping Simultaneously Improves the Field Frequency Adaptability and Dielectric Properties of Ferroelectric Materials:A Phase-Field Study  

作　　者：Zhi Wang Jinming Cao Zhonglei Liu Yuhong Zhao 

机构地区：[1]School of Materials Science and Engineering,Collaborative Innovation Center of Ministry of Education and Shanxi Province for High-Performance Al/Mg Alloy Materials,North University of China,Taiyuan,030051,China [2]Beijing Advanced Innovation Center for Materials Genome Engineering,University of Science and Technology Beijing,Beijing,100083,China [3]Institute of Materials Intelligent Technology,Liaoning Academy of Materials,Shenyang,110004,China

出　　处：《Computers, Materials & Continua》2024年第10期213-228,共16页计算机、材料和连续体（英文）

基　　金：supported by National Defense Basic Scientific Research Program of China(Grant Nos.JCKY2020408B002,WDZC2022-12).

摘　　要：Recent years,the polarization response of ferroelectrics has been entirely studied.However,it is found that the polarization may disappear gradually with the continually applied of electric field.In this paper,taking K0.48Na0.52NbO3(KNN)as an example,it was demonstrated that the residual polarization began to decrease when the electric field frequency increased to a certain extent using a phase-field methods.The results showed that the content of out-of-plane domains increased first and then decreased with the increase of applied electric field frequency,the maximum polarization disappeared at high frequencies,and the hysteresis loop became elliptical.In order to further study the abnormal changes of hysteresis loops of ferroelectrics under high electric field frequency,we analyzed the hysteresis loop and dielectric response of solid solution 0.1SrTiO_(3)-0.9K_(0.48)Na_(0.52)NbO_(3).It was found that the doped hysteresis loop maintained its shape at higher frequency and the dielectric constant increased.This kind of doping has a higher field frequency adaptability,which has a key guiding role in improving the dielectric properties of ferroelectric thin films and expanding the frequency application range of ferroelectric nano memory。

关 键 词：Ferroelectric ceramics dielectric properties electric field frequency DOPING phase field method 

分 类 号：TB34[一般工业技术—材料科学与工程]