基于全波仿真和去嵌入测试相结合的ARM芯片PDN阻抗提取方法  

Extraction method for impedance of ARM chip PDN by combining full-wave simulation and de-embedding testing

作　　者：肖扬 周忠元[1] 王海春 任近静 刘士宽 Xiao Yang;Zhou Zhongyuan;Wang Haichun;Ren Jinjing;Liu Shikuan(School of Mechanical Engineering,Southeast University,Nanjing 211189,China)

机构地区：[1]东南大学机械工程学院,南京211189

出　　处：《东南大学学报（自然科学版）》2024年第5期1283-1289,共7页Journal of Southeast University：Natural Science Edition

基　　金：国家自然科学基金资助项目(52077031).

摘　　要：为提取内部电路和材料信息未知的ARM芯片电源分配网络阻抗参数,将全波仿真与去嵌入测试相结合,提出了一种ARM芯片PDN阻抗提取方法.首先,设计出ARM芯片PDN阻抗测试夹具;其次,基于全波仿真,获取阻抗测试夹具的S参数;然后,采用去嵌入技术测试,获得ARM芯片PDN阻抗,并建立等效电路模型;最后,采用数字控制电路应用板,对该等效电路模型进行校验.结果表明:阻抗曲线的谐振频率仿真值和测试值分别为56.34和57.37 MHz;阻抗曲线仿真结果和测试结果在10~1000 MHz频段内具有较好的一致性,从而证明该方法能够准确提取贴片电子元件的阻抗参数.To extract impedance parameters of advanced reduced instruction set computing machines(ARM)chip power distribution network(PDN)with unknown internal circuits and material information,an extraction method for the impedance of ARM chip PDN was proposed by combining full-wave simulation and de-embedding testing.First,the impedance testing fixtures for ARM chip PDN were designed.Then,S parameters of the impedance testing fixtures were obtained based on full-wave simulation.Subsequently,the impedance of ARM chip PDN was tested using de-embedding testing and an equivalent circuit model was established.Finally,the equivalent circuit model was verified using a digital control circuit application board.The results indicate that the resonant frequencies of the impedance curves obtained by simulation and testing are 56.34 and 57.37 MHz,respectively.There is good consistency between the simulation and testing impedance curves in the frequency band of 10 to 1000 MHz.Therefore,this method can accurately extract the impedance parameters of electronic components of surface mounted devices.

关 键 词：全波仿真 去嵌入 贴片电子元件 阻抗 

分 类 号：TN40[电子电信—微电子学与固体电子学]