一款全定制深亚微米抗辐照LDO的版图设计  

Full-custom Layout Design of the Deep Submicron Anti-irradiation LDO

作　　者：邹文英 张宇涵 李小强 杨沛 ZOU Wenying;ZHANG Yuhan;LI Xiaoqiang;YANG Pei(The 58th Research Institute of China Electronic Technology Group Corporation,Wuxi,Jiangsu,214072,CHN)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214072

出　　处：《固体电子学研究与进展》2024年第5期445-449,460,共6页Research & Progress of SSE

摘　　要：为了提高低压差线性稳压器(Low dropout regulator,LDO)在辐射环境下的功能稳定性,本文提出了一种适用于深亚微米LDO的抗辐照版图加固技术。通过使用大头条形栅和P+保护环等结构,并结合工艺加固和版图设计技术来提高电路的抗辐照性能。测试结果表明设计的LDO电路具有较好的电源抑制比、高增益和快速瞬态响应;电路的辐照实验表明,电离辐射总剂量大于300 krad(Si),单粒子闩锁(Single event latch-up,SEL)的阈值大于75 MeV·cm^(2)/mg,单粒子翻转(Single event upset,SEU)错误率小于1×10^(-10)error/(bit·day),满足深亚微米LDO的抗辐照要求。In order to improve the function stability of low voltage differential linear voltage regulator in radiation environment,an anti-radiation layout reinforcement technique for deep sub-micro LDO was proposed in this paper.The anti-irradiation capability of the circuit had been improved by using the large-head strip gate and P+protection ring and other structures,combined with process reinforcement and layout design technology.The test results show that the LDO circuit designed in this paper has good power supply rejection ratio,gain and fast transient response.The irradiation experiments show that the total dose of ionizing radiation is more than 300 krad(Si),and the threshold for single event latch-up(SEL)is greater than 75 MeV·cm^(2)/mg,the error rate for single event upset(SEU)is less than 1×10^(-10)error/(bit·day).So,the deep sub-micron LDO circuit meets irradiation resistance requirements.

关 键 词：低压差线性稳压器 大头条形栅 P+保护环 版图设计技术 辐射效应 

分 类 号：TN43[电子电信—微电子学与固体电子学]