LDD MOSFET热载流子退化分析及其寿命预测  

Hot Carrier Degradation Analysis and Lifetime Prediction of LDD MOSFET

作　　者：陈光前 刘伟景 刘先婷 李清华 CHEN Guangqian;LIU Weijing;LIU Xianting;LI Qinghua(College of Electronics and Information Engineering,Shanghai University of Electric Power,Shanghai,200090,CHN;Radiawave Technologies Corporation Limited,Shenzhen,Guangdong,518172,CHN)

机构地区：[1]上海电力大学电子与信息工程学院,上海200090 [2]深圳锐越微技术有限公司,广东深圳518172

出　　处：《固体电子学研究与进展》2024年第4期351-356,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(52177185,62174055)。

摘　　要：集成电路器件密集化导致电场梯度增大和电流密度集中,加剧了热载流子效应,电热性能退化。本文聚焦热载流子注入(Hot carrier injection, HCI)效应对器件可靠性的影响问题,通过研究N型轻掺杂漏极金属氧化物半导体场效应晶体管(N-type lightly doped drain metal-oxide-semiconductor field effect transistor, LDD NMOSFET)的寿命试验,深入分析了中栅应力区HCI对器件关键电学参数的影响,并与低栅应力区的退化模式进行了对比。结果表明,线性漏极电流的退化率高于饱和漏电流,但退化幂律小于饱和漏电流;在相同应力下不同电学参数的退化率不同,其中最大跨导的退化率最高。基于测试数据构建了LDD NMOSFET电学参数随应力时间变化的关系,提取模型参数,确定了寿命预测模型,并外推出了不同应力电压下的器件寿命。The densification of integrated circuit devices leads to an increase in electric field gradi⁃ent and concentration of current density,which intensifies the hot carrier effect and the resulting degra⁃dation of electrothermal performance.In this article,the focus was placed on the reliability of hot carri⁃er injection(HCI)devices,with a study conducted on the lifetime test of N⁃type lightly doped drain metal⁃oxide⁃semiconductor field effect transistor(LDD NMOSFET).The influence of HCI in the middle gate stress region on the key electrical parameters of the device was deeply analyzed,and a comparison was made with the degradation mode in the low gate stress region.The results show that the degradation rate of linear drain current is larger than that of saturated drain current,but the degra⁃dation power law is smaller than that of saturated drain current.Under the same stress,the degrada⁃tion rates of different electrical parameters are observed to be different,with the highest degradation rate observed in maximum transconductance.Based on the test data,the relationship between the elec⁃trical parameters of LDD NMOSFET as a function of stress time has been established,the model pa⁃rameters have been extracted,the lifetime prediction model have been determined,and the device life⁃time under different stress voltages has been extrapolated.

关 键 词：可靠性 热载流子注入(HCI) 轻掺杂漏极(LDD) 器件退化 寿命预测 

分 类 号：TN306[电子电信—物理电子学]