面向未来高性能电子器件的石墨烯纳米带  

Graphene nanoribbons for next-generation high-performance electronics

作　　者：吕博赛 娄硕 沈沛约 史志文 LYU Bo-Sai;LOU Shuo;SHEN Pei-Yue;SHI Zhi-Wen(Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China;Department of Quantum Matter Physics,University of Geneva,Geneva 1211,Switzerland)

机构地区：[1]上海交通大学物理与天文学院人工结构及量子调控教育部重点实验室,上海200240 [2]日内瓦大学量子材料物理系,瑞士日内瓦1211

出　　处：《物理》2024年第10期683-690,共8页Physics

基　　金：国家重点基础研发计划(批准号:2022YFA1402702,2021YFA1202902);国家自然科学基金(批准号:1207040057,1237042375)资助项目。

摘　　要：石墨烯纳米带具有可调节的带隙和较高的载流子迁移率,是未来高性能纳米电子器件的理想候选材料之一。然而,可用于电子器件的高质量石墨烯纳米带的制备一直是一个巨大挑战。文章关注高质量石墨烯纳米带的制备,重点介绍近年来采用金属纳米颗粒催化生长纳米带方面的重要进展,尤其是运用该技术在六方氮化硼层间嵌入式生长超高质量石墨烯纳米带的最新成果。基于这种层间纳米带的场效应晶体管表现出优异的性能,有望在将来的碳基纳米电子器件中扮演重要的角色。最后讨论该领域未来可能面临的机遇与挑战。Graphene nanoribbons possess a tunable bandgap and high carrier mobility,making them an ideal candidate for future high-performance nanoelectronic devices.However,the preparation of high-quality nanoribbons suitable for electronic applications has been a significant challenge.This article focuses on their nanoparticle-catalyzed fabrication and the use of this technique in growing high-quality nanoribbons embedded within hexagonal boron nitride stacks.Field-effect transistors based on this structure demonstrate excellent performance,showing promise for future carbon-based nanoelectronics.Finally,we explore the potential opportunities and challenges in this field.

关 键 词：石墨烯纳米带 纳米颗粒 催化生长 氮化硼封装 碳基纳米电子学 

分 类 号：TQ127.11[化学工程—无机化工] TB383.1[一般工业技术—材料科学与工程]