考虑表面效应的压电半导体梁的静态屈曲行为研究  

Static Buckling Behaviors of Piezoelectric Semiconductor Beams With Steigmann-Ogden Surface Effects

作　　者：詹春晓[1] 李孝宝 王美芹[1] ZHAN Chunxiao;LI Xiaobao;WANG Meiqin(School of Civil Engineering,Hefei University of Technology,Hefei 230009,P.R.China)

机构地区：[1]合肥工业大学土木与水利工程学院,合肥230009

出　　处：《应用数学和力学》2024年第10期1300-1312,共13页Applied Mathematics and Mechanics

基　　金：安徽省自然科学基金(2208085MA17)。

摘　　要：鉴于表面效应和挠曲电效应对纳米材料或结构的力学行为具有显著影响,以纳米尺度压电半导体(PS)梁为研究对象,根据Hamilton变分原理,推导建立了考虑Steigmann-Ogden表面弹性效应和挠曲电效应的Euler-Bernoulli梁理论模型和相应的边界条件.结合电荷守恒方程和线性漂移扩散方程,研究了该梁结构的静态屈曲行为,得到了短路和开路条件下梁结构的等效弹性常数和屈曲临界压力的解析解.详细分析了表面效应、尺寸效应、挠曲电效应以及载流子屏蔽效应等因素对梁结构的等效弹性常数的影响规律和作用机制.该文的研究结果对基于纳米压电半导体梁结构电子器件的设计和应用具有指导作用.The surface elastic and flexoelectric effects significantly influence the mechanical behaviors of nanoscale materials and structures.The static buckling behaviors of piezoelectric semiconductor(PS)beams were studied through the establishment of an Euler-Bernoulli beam theoretical model in view of the Steigmann-Ogden surface elasticity and flexoelectricity.The governing equations and associated boundary conditions were derived under the Hamiltonian variational principle.In combination with the conservation equations for electrostatics and linear drift-diffusion equations,the analytical solutions of the effective elastic constants and critical buckling loads were obtained under both short and open circuit conditions.Numerical calculations were carried out to explore the effective elastic behaviors of the nanoscale PS beam under the effects of flexoelectricity,surface elasticity and shielding of charge carriers.This work provides a valuable guidance for designing high-performance electronic devices with piezoelectric semiconductor beams.

关 键 词：压电半导体梁 屈曲 表面效应 挠曲电效应 

分 类 号：O34[理学—固体力学]