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作 者:李建基 李士会 LI Jian-ji;LI Shi-hui(Beijing Semicore Zkx Electronics Equipment CO.,LTD.)
机构地区:[1]北京烁科中科信电子装备有限公司
出 处:《中国集成电路》2024年第10期79-82,共4页China lntegrated Circuit
摘 要:离子注入机在进行元素掺杂的过程中,会因离子源区打火、气流不稳定等各种因素导致掺杂的过程发生束流漂移而导致注入中断,中断检测与补注入方案的缺陷将导致掺杂过程中束流状态检测不准确、不及时、补注入不准确等问题,严重影响注入机掺杂的工艺水平,产品的电性能和良率也受到影响。基于NI控制系统升级剂量控制方案,并进行了典型菜单的工艺验证,通过工艺数据分析,确定该方案设计满足生产使用的需求和指标。In the process of ion implantation,Beam Glitch or Beam Drift will occur in the doping process due to vari-ous factors such as ignition in the source region and unstable air flow.The defects of the existing interrupt detection and replenishment injection schemes will cause the detection of the beam state in the doping process inaccurate and not timely.And the problems such as the inaccuracy of supplement injection seriously affect the technological level of the injection machine doping,and the qualified rate of the product is also greatly reduced.Now based on the control system,the upgrade design of the control scheme is carried out,and the process verification of the typical Recipe is carried out.Through the process data analysis and judgment,it is determined that the design of the scheme meets the requirements and specifications of the production line.
分 类 号:TN405[电子电信—微电子学与固体电子学]
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