一种10 kV/10 ns/20 A全固态脉冲源设计  

Design of a 10 kV/10 ns/20 A all solid state pulse generator

作　　者：石小燕[1,2] 杨浩 郑强林[1,2] 闫二艳 鲍向阳[1,2] SHI Xiaoyan;YANG Hao;ZHENG Qianglin;YAN Eryan;BAO Xiangyang(Institute of Applied Electronics,China Academy of Engineering Physics,Mianyang Sichuan 621999,China;Key Laboratory of High Power Microwave Technology,China Academy of Engineering Physics,Mianyang Sichuan 621999,China)

机构地区：[1]中国工程物理研究院应用电子学研究所,四川绵阳621999 [2]中国工程物理研究院高功率微波技术重点实验室,四川绵阳621999

出　　处：《太赫兹科学与电子信息学报》2024年第10期1168-1171,共4页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(62001442)。

摘　　要：为获得等离子体研究所需的半高宽约10 ns的高压高重复频率脉冲输出,采用金属氧化物半导体场效应晶体管(MOSFET)开关串联构成的2组高压开关模块,利用传统电容储能脉冲产生电路和脉冲切尾电路相结合产生窄脉冲。结合开关实际工作需求,开展了窄脉冲产生电路适应性设计及仿真优化;依据优化结果,搭建窄脉冲产生电路实验装置。经测试,在500Ω负载上获得了峰值电压约10 kV、半高宽约10 ns、前沿约6 ns的脉冲输出。To obtain the high-voltage high-repetition-rate pulse output with a half-width of about 10 ns required for plasma research,two sets of high-voltage switch modules composed of Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET)switches in series are used.By combining traditional capacitor energy storage pulse generation circuits with pulse tail cutting circuits,narrow pulses are generated.Based on the actual working requirements of the switches,adaptive design and simulation optimization of the narrow pulse generation circuit are carried out;according to the optimization results,an experimental device for narrow pulse generation circuit is built.After testing,a pulse output with a peak voltage about 10 kV,a half-width about 10 ns,and a front edge about 6 ns is obtained on a load of 500Ω.

关 键 词：全固态脉冲源 窄脉冲发生器 10 ns半高宽 等离子体应用 

分 类 号：TN788[电子电信—电路与系统]