A novel self-alignment method for high precision silicon diffraction microlens arrays preparation and its integration with infrared focal plane arrays  

采用新颖自对准法制备高精度硅衍射微透镜阵列及其与红外焦平面阵列集成

作　　者：HOU Zhi-Jin CHEN Yan WANG Xu-Dong WANG Jian-Lu CHU Jun-Hao 侯治锦;陈艳;王旭东;王建禄;褚君浩(复旦大学光电研究院光伏科学与技术全国重点实验室上海市智能光电与感知前沿科学研究基地,上海200433;中国科学院上海技术物理研究所红外物理全国重点实验室,上海200083)

机构地区：[1]State Key Laboratory of Photovoltaic Science and Technology,Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception,Institute of Optoelectronics,Fudan University,Shanghai 200433,China [2]State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

出　　处：《红外与毫米波学报》2024年第5期589-594,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(NSFC 62105100);the National Key research and development program in the 14th five year plan(2021YFA1200700)。

摘　　要：Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.硅衍射微透镜阵列通常被用来与红外焦平面集成而提高器件性能。在常规套刻法用于制备硅衍射微透镜阵列时光刻误差是很难避免的。这对器件性能及后续应用产生严重的影响。针对此问题,本文提出一种高精度硅衍射微透镜阵列制备的新颖自对准方法。该方法中硅衍射微透镜阵列的制备精度只由第一次掩膜光刻的精度决定。在后续的刻蚀中,采用掩膜层和牺牲层或保护层将已刻蚀区域进行保护,对未保护区域进行刻蚀,有效地阻挡非刻蚀区域,精确刻蚀所需刻蚀区域。采用新颖自对准法可以制备出高精度硅衍射微透镜阵列,其衍射效率可达到92.6%。与红外焦平面探测器集成后,平均黑体响应率提高了8.3%,平均黑体探测率提高了10.3%。这表明硅微透镜阵列可以通过会聚作用提高焦平面阵列占空因子,同时降低串扰,进而提高焦平面阵列性能。该研究结果对通过优化微纳器件制作水平提升其性能具有重要参考意义。

关 键 词：SELF-ALIGNMENT diffraction microlens arrays high precision INTEGRATION SI IRFPAs 

分 类 号：TN215[电子电信—物理电子学]