基于四氯铁酸铯(CsFeCl_(4))薄膜的柔性紫外光电探测器  

Flexible UV photodetector based on cesium tetrachloroferrate(CsFeCl_(4))film

作　　者：曹久朋 陈浩宇 周啸天 秦天石 CAO Jiupeng;CHEN Haoyu;ZHOU Xiaotian;QIN Tianshi(School of Flexible Electronics(Future Technologies),Nanjing Tech University,Nanjing 210009,China)

机构地区：[1]南京工业大学柔性电子(未来技术)学院,江苏南京210009

出　　处：《南京工业大学学报（自然科学版）》2024年第5期502-510,共9页Journal of Nanjing Tech University(Natural Science Edition)

基　　金：国家自然科学基金(62204114)。

摘　　要：本研究旨在改进传统紫外光电探测器,以提升其在波长选择性、工作电压和结构方式等方面的性能。通过高温固相反应法制备了四氯铁酸铯(CsFeCl_(4))半导体粉末,并制备了基于CsFeCl_(4)的紫外光电探测器。CsFeCl_(4)的光电特性表征和密度泛函理论(DFT)计算表明其具有3.28 eV的直接带隙。在70μW/cm的365 nm光源光照下,紫外光电探测器表现出的最高响应率为36.5 mA/W,响应上升时间和下降时间分别为4.7和6.6 s。基于柔性基底的紫外光电探测器展现出优秀的光响应特性和力学稳定性,在经历200次弯曲循环后,电流仍能保持99%以上。对CsFeCl_(4)卤化物半导体进行了系统研究,展示了其在未来紫外光光电器件中的潜在应用价值。This study aims to enhance the performance of traditional UV photodetectors in terms of wavelength selectivity,operating voltage,and structural design.Cesium tetrachloroferrate(CsFeCl_(4))semiconductor powders were synthesized using a high-temperature solid-phase reaction method,and a CsFeCl_(4)-based ultraviolet photodetector was fabricated.Characterization of the photoelectric properties of CsFeCl_(4)and density functional theory(DFT)calculations revealed a direct bandgap of 3.28 eV.Under illumination from a 365 nm light source at 70μW/cm,the UV photodetector exhibited a maximum responsivity of 36.5 mA/W,with response rise and fall times of 4.7 and 6.6 s,respectively.The UV photodetector on a flexible substrate demonstrated excellent photoresponse characteristics and mechanical stability,maintaining over 99%of its current after 200 bending cycles.This study provides a systematic investigation of CsFeCl_(4)halide semiconductor,showcasing its potential application value in future UV optoelectronic devices.

关 键 词：紫外光电探测器 CsFeCl_(4) 宽带隙 柔性探测器 

分 类 号：TQ139.1[化学工程—无机化工]