长波碲镉汞红外探测器低光通量下的性能研究  

Performance study of long-wave HgCdTe infrared detector in low luminous flux

作　　者：魏佳欣 林春[2] 王溪[2] 林加木[2] 周松敏[2] 李珣 WEI Jia-xin;LIN Chun;WANG Xi;LIN Jia-mu;ZHOU Song-min;LIN Xun(School of Microelectronics,Shanghai University,Shanghai 201800,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]上海大学微电子学院,上海201800 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《激光与红外》2024年第10期1579-1585,共7页Laser & Infrared

摘　　要：为了评价n-on-p长波碲镉汞红外焦平面探测器在低光通量下的性能参数,搭建了低光通量测试平台。首先,介绍了低光通量测试平台相关情况,并对器件的暗电流测试结果进行了分析。然后,在低光通量测试平台上对长波碲镉汞红外探测器在低光通量下的黑体响应性能。最后,对比分析不同光通量下性能参数如响应率、波段探测率性能参数的变化,并给出了器件工作温度改变对器件性能影响的结果。测试结果表明,对于10.8μm@50K的碲镉汞焦平面探测器,在器件工作温度50K,光通量密度为5.8×10^(14)ph·s^(-1)·cm^(-2)条件下,器件波段探测率达到峰值1.5×10^(12)cm·Hz^(1/2)·W^(-1),此时探测率不再随积分时间的增加而提高。实验计算结果及相关参数可为探测器应用提供参考。To evaluate the performance parameters of n-on-p long-wave HgCdTe infrared focal plane array(IRFPA)detector at low luminous flux,a low-luminous test platform is set up in this paper.Firstly,the low luminous flux test platform is introduced and the dark current test results of the devices are analyzed.Then,the blackbody response performance of long-wave HgCdTe infrared detector in a low luminous flux is investigated on the low-luminous flux test platform.At last,the changes of performance parameters such as responsivity and band detectivity under different luminous fluxes are compared and analyzed,and the results of the influence of device operating temperature on device performance are given.The test results show that for the 10.8μm@50 K MCT focal plane detector,the device band detectivity reaches a peak value of 1.5×10^(12)cm·Hz^(1/2)·W^(-1) under the conditions of device operating temperature of 50 K and a luminous flux density of 5.8×10^(14)ph·s^(-1)·cm^(-2),when the detectivity is no longer increased with the increase of integration time.The experimental calculation results and related parameters can provide a reference for the application of the detector.

关 键 词：长波 碲镉汞 n-on-p 低光通量 

分 类 号：TN215[电子电信—物理电子学] TP274[自动化与计算机技术—检测技术与自动化装置]