基于电压下降时间的SiC MOSFET结温在线检测方法  

Online Detection of SiC MOSFET Junction Temperature Based on Voltage Fall Time

作　　者：樊祖威 魏伟伟 徐国卿[1] FAN Zuwei;WEI Weiwei;XU Guoqing(School of Mechatronic Engineering and Automation,Shanghai University,Shanghai 200444)

机构地区：[1]上海大学机电工程与自动化学院,上海200444

出　　处：《电气工程学报》2024年第3期50-59,共10页Journal of Electrical Engineering

摘　　要：随着功率器件在航天航空、轨道交通和电动汽车等领域的广泛应用,其可靠性问题备受关注,准确估计器件结温是确保电力电子装置运行可靠性的关键因素,同时也是实现SiC MOSFET器件寿命预测和健康管理的基础。以SiC MOSFET为研究对象,研究SiC MOSFET开通过程漏源极电压下降时间(tfv)与结温的关系,提出一种基于电压下降时间的结温测量方法;设计基于高频信号的电压下降时间检测电路和驱动电阻可切换的结温检测系统。试验结果表明,大驱动电阻下SiC MOSFET电压下降时间在结温表征方面具有温度灵敏度高、线性度好的优势,可作为温敏电参数测量SiC MOSFET结温;所设计的检测电路提取的电压下降时间具有很高的准确度,能够有效提取电压下降时间;所搭建的结温检测系统能够实现在线检测结温。With the widespread application of power devices in aerospace,rail transit,and electric vehicles,their reliability has garnered significant attention.Accurate estimation of device junction temperature is crucial for ensuring the operational reliability of power electronic systems,and it is also the basis for realizing the life prediction and health management of SiC MOSFET devices.Focuse on SiC MOSFETs,the relationship between the drain-source voltage fall time(tfv)during the turn-on process and the junction temperature is investigated.Based on this relationship,a junction temperature measurement method utilizing the voltage fall time is proposed.A high-frequency signal-based voltage fall time detection circuit and a junction temperature detection system with switchable drive resistance are designed.Experimental results demonstrate that under high drive resistance conditions,the voltage fall time of SiC MOSFETs exhibits high-temperature sensitivity and good linearity,making it suitable as a temperature sensitive electrical parameter for measuring junction temperature.The designed detection circuit accurately extracts the voltage fall time,while the constructed junction temperature detection system enables online temperature monitoring.

关 键 词：SiC MOSFET 结温检测 电压下降时间 温敏电参数 

分 类 号：TM46[电气工程—电器]