超快极紫外光源产生及其在半导体检测中的应用(特邀)  

Generation of Ultrafast Extreme Ultraviolet Light Source and its Applications in Semiconductor Detection(Invited)

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作  者:曾志男 Zeng Zhinan(Zhangjiang Laboratory,Shanghai 200120,China)

机构地区:[1]张江实验室,上海200120

出  处:《光学学报》2024年第17期119-133,共15页Acta Optica Sinica

摘  要:近些年,随着光刻技术进入极紫外光刻,相关的技术研究对极紫外光源的需求大幅度增长。基于高次谐波的超快极紫外光源成为一种重要的极紫外光刻技术研究工具,同时基于这种超快极紫外光源在光刻和半导体检测中的应用研究也在快速发展。回顾了近些年高重复频率高亮度的高次谐波超快极紫外光源的发展以及其在极紫外光刻和半导体检测方面的一些应用。随着高重复频率激光技术的发展,高次谐波方法已可以在极紫外波段产生功率高达12.9 mW的单次谐波,大大拓展了其应用范围。由于高次谐波具有很高的亮度、超宽的光谱和非常好的相干性,目前在相干衍射成像、相干散射成像等方面具有广泛的应用前景,比如在掩模检测中可观测到最小达到2 nm的线缺陷,有望实现晶体管的三维(3D)纳米尺寸量测等。Significance Currently,the rapid development of artificial intelligence(AI),cloud computing,mobile communications,the Internet of Things,and other fields has created a significant demand for advanced chips.Lithography is a core step in the manufacture of these chips,as its level directly determines the process and performance of the chip.The most advanced extreme ultraviolet(EUV)lithography machines currently use 13.5 nm light and are employed in high-volume manufacturing(HVM)of chips at 5 nm node and below.Throughout the production process,each step must be quantitatively measured to ensure that key parameters meet the process targets.While optical technology is predominant in semiconductor inspection and metrology,the sensitivity of traditional optical methods is gradually diminishing.Due to the substantial wavelength shift from 193 nm to 13.5 nm,EUV lithography necessitates new components and materials.Consequently,the detection of these components and research into material interactions need to be conducted anew under EUV light sources.Presently,EUV optical equipment mainly uses discharged produced plasma(DPP)and laser produced plasma(LPP)light sources.However,these plasma light sources have several drawbacks.They produce significant contamination,as plasma fragments can affect devices from the collection mirror to the sample,impacting their lifespan and operating environment.In addition,although plasma EUV light sources offer high power,its radiation of 4πsolid angle leads to its low brightness,which will affect its application in high-resolution detection.Therefore,exploring new EUV light sources for quantitative detection is crucial.Since the first discovery of high-order harmonics(HHG)in 1987,extreme ultraviolet high-order harmonics(HHG-EUV)have been widely used in electron dynamics research and various spectroscopy and imaging studies due to its high coherence,short pulses,and high photon energy.High-order harmonics exhibit unique properties,such as good directionality,excellent temporal and spatial coh

关 键 词:超快光学 极紫外光源 成像检测 半导体 

分 类 号:O439[机械工程—光学工程]

 

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