基于太赫兹脉冲时域反射的微带电路不均匀性无损检测  

Inhomogeneity Distribution Nondestructive Testing of Microstrip Circuits Based on THz⁃TDR

作　　者：徐振 梁博涵 刘龙海 罗曼 李吉宁 钟凯[1,2] 王与烨[1,2] 徐德刚[1,2] Xu Zhen;Liang Bohan;Liu Longhai;Luo Man;Li Jining;Zhong Kai;Wang Yuye;Xu Degang(School of Precision Instruments and Opto-Electronics Engineering,Tianjin University,Tianjin 300072,China;Key Laboratory of Opto-Electronic Information Technology(Ministry of Education),Tianjin University,Tianjin 300072,China;Advantest(China)Co.,Ltd.,Shanghai 201203,China)

机构地区：[1]天津大学精密仪器与光电子工程学院,天津300072 [2]天津大学光电信息技术教育部重点实验室,天津300072 [3]爱德万测试(中国)管理有限公司,上海201203

出　　处：《中国激光》2024年第18期142-152,共11页Chinese Journal of Lasers

基　　金：国家自然科学基金(U22A20123,62175182,62275193,U22A20353)。

摘　　要：微带电路在混合型微波集成电路中常被作为传输线或者电路元件,但其生产工艺、使用规范性等因素会导致微带线产生不均匀性。因此,微带电路不均匀性检测技术对于提高集成电路的安全性与稳定性至关重要。针对三种常见的不均匀微带线样品,本课题组结合实验测量、模拟仿真与理论分析对基于太赫兹脉冲时域反射的微带线不均匀性检测技术进行了研究。结果显示:太赫兹脉冲沿着微带线传输和反射,可根据第1个反射脉冲对应的时间计算得到导线长度,计算结果与实际长度的最小误差仅为1.2%。当导线中存在T形分支线或导线发生弯折时,会在分支线和主导线末端反射回正脉冲信号;当线路中存在多个分支线或弯折点时,在每个分支线或弯折点出现位置反射回负脉冲信号。根据反射脉冲计算得到的微带线不均匀性发生位置与实际位置的距离误差在10μm量级,定位误差仅为0.2%。实验测得的时域反射信号峰的特征与仿真结果、理论分析具有良好的一致性。本研究表明太赫兹时域反射技术能够实现对集成电路微带线中的多种不均匀性结构进行定位检测,为封装芯片内部缺陷检测奠定了基础。Objective Microstrip circuits are typically used to combine devices and circuits to improve the overall performance of a machine.They offer advantages of high reliability and integration;however,their cumbersome and complex processing process can easily cause breakage,bending,branching,and other inhomogeneity problems,thus causing adverse equipment operations.The classical microstrip-circuit defect-detection methods involve complex image post-processing,difficult to distinguish high-density alignments,long test cycles,and other shortcomings.Hence,a more efficient and convenient detection technology that can localize fault defects is required.Methods Time-domain reflection is a technique that involves injecting a pulse signal into a test sample,and the impedance-change position in the line will reflect a portion of the pulse signal.The type and location of impedance change can be determined based on the peak characteristics of the reflected signal.The classical pulse time-domain reflection technique features large signal jitters and low resolutions,whereas the rise time of terahertz pulses is on the order of picoseconds and the signal jitter is on the order of femtoseconds.Applying terahertz pulses in the time-domain reflection detection of defects in microstrip circuits allows one to detect defects with high resolution and accurate localization.In this study,different lengths of microstrip wires,different numbers of branching wires,and“back”bent wires were designed to simulate three different types of inhomogeneous structures typically observed in broken wires,T-branches,and continuous right-angle bending microstrip circuits,respectively.First,the terahertz pulse timedomain reflection signals of the three different types of inhomogeneous wires were obtained using the ADVANTEST TS9001TDR system,and the distance error between the inhomogeneous position calculated based on the pulse signals and the actual position was analyzed.Subsequently,simulation software was used to establish a pulse time-domain reflection

关 键 词：太赫兹 时域反射 微带线 不均匀性 集成电路 

分 类 号：O433.4[机械工程—光学工程] TN29[理学—光学]