Al_(2)O_(3)/HfO_(2)双钝化层微波氢终端金刚石MOSFET特性研究  

Study on Characteristics of Microwave Hydrogen-terminated Diamond MOSFET with Al_(2)O_(3)/HfO_(2) Double Passivation Layer

作　　者：陈志豪 延波[1] 徐跃杭[1] CHEN Zhi-hao;YAN Bo;XU Yue-hang(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学电子科学与工程学院,四川成都611731

出　　处：《真空电子技术》2024年第5期71-77,82,共8页Vacuum Electronics

基　　金：国家自然科学基金(61922021)。

摘　　要：微波氢终端金刚石器件低纵横比会导致较高的关态漏极泄漏电流,从而降低器件可靠性。文章首先提出一种金属-绝缘体-半导体电容模型揭示了漏极泄漏电流的抑制机理,然后利用高介电常数(High-K)顶部钝化层(Upper Passivation Layer,UPL)对漏极泄漏电流进行抑制,最后制备了40/100 nm Al_(2)O_(3)/HfO_(2)双钝化层氢终端金刚石金属-氧化物-半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)。实验结果表明,顶部钝化100 nm厚HfO_(2)后的氢终端金刚石MOSFET,在纵横比为7.5的情况下实现了约-3×10^(-7)mA/mm的漏极泄漏电流,射频特性测试表明其截止频率和最高振荡频率分别为6.1 GHz和11.1 GHz。以上结果表明,本文提出的Al_(2)O_(3)/HfO_(2)双钝化层氢终端金刚石MOSFET在高可靠和高频应用方面具有重要意义。Microwave hydrogen-terminated diamond devices have relatively high off-state drain leakage current due to low aspect ratio,which reduces the reliability of devices.A metal-insulator-semiconductor capacitance model is proposed to reveal the suppression mechanism of drain leakage current,and high-k upper passivation layer is used to suppress it.A hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor(MOSFET)with a 40 nm/100 nm Al_(2)O_(3)/HfO_(2) double passivation layer is fabricated.The experimental results show that the hydrogen-terminated diamond MOSFET with a 100 nm HfO_(2) upper passivation layer achieves drain leakage current of about-3×10^(-7)mA/mm at an aspect ratio of 7.5.Radio frequency characteristics measurement shows that the cut-off frequency and maximum oscillation frequency of the device are 6.1GHz and 11.1 GHz,respectively.The above results manifest that hydrogen-terminated diamond MOSFETs with Al_(2)O_(3)/HfO_(2) double passivation layer has important significance in high reliability and high frequency applications.

关 键 词：氢终端金刚石 漏极泄漏电流 金属-绝缘体-半导体电容模型 Al_(2)O_(3)/HfO_(2)双钝化层 

分 类 号：TN386[电子电信—物理电子学]