Solute atom segregation to I1 stacking fault and its bounding partial dislocations in a Mg–Bi alloy  

作　　者：Cong He Yong Zhang Zhiqiao Li Houwen Chen Jian-Feng Nie 

机构地区：[1]International Joint Laboratory for Light Alloys(Ministry of Education),College of Materials Science and Engineering,Chongqing University,Chongqing 400044,PR China [2]Research Center for Magnetic and Spintronic Materials,National Institute for Materials Science,Tsukuba 305-0047,Japan [3]Department of Materials Science and Engineering,Monash University,Victoria 3800,Australia [4]State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body,Hunan University,Changsha 410082,PR China

出　　处：《Journal of Magnesium and Alloys》2024年第8期3135-3141,共7页镁合金学报（英文）

基　　金：support by the National Natural Science Foundation of China(52071033);Open Foundation of State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body(32115016).

摘　　要：Stacking faults(SFs)and the interaction between solute atoms and SFs in a Mg–Bi alloy are investigated using aberration-corrected scanning transmission electron microscopy.It is found that abundant I_(1)SFs are generated after cold rolling and are mainly distributed inside{1012}twins.After aging treatment,the formation of single-layer and three-layer Bi atom segregation in the vicinity of I_(1)fault are clearly observed.Bi segregation also occurs at the 1/6<2203>bounding Frank partial dislocation cores.The segregation behaviors in I_(1)fault and Frank dislocations are discussed and rationalized using first-principles calculations.

关 键 词：Mg alloys Suzuki segregation Stacking fault Frank partial dislocation 

分 类 号：TG146.22[一般工业技术—材料科学与工程]