2~6 GHz 1W宽带高效率功率放大器芯片设计  

Design of 2~6 GHz 1W Broadband High Efficiency Power Amplifier Chip

作　　者：廖学介 羊洪轮[1] 王测天 喻涛 张帆 杨聪聪 LIAO Xuejie;YANG Honglun;WANG Cetian;YU Tao;ZHANG Fan;YANG Congcong(Chengdu Ganide Technology Co.,Ltd.,Sichuan 610220,China;College of Electronic Science and Engineering,University of Electronic Science and Technology of China,Sichuan 611731,China)

机构地区：[1]成都嘉纳海威科技有限责任公司,四川610220 [2]电子科技大学电子科学与工程学院,四川611731

出　　处：《电子技术（上海）》2024年第8期10-12,共3页Electronic Technology

摘　　要：阐述一款基于0.15μm GaAs pHEMT工艺2~6GHz 1W宽带高效率功率放大器芯片的设计,给出夹具测试结果。该放大器芯片采用两级级联放大结构,以确保较高的功率增益,同时匹配采用多级LC结构,可以拓宽放大器的工作频段,同时较低的插损可以使放大器保持较高的效率和功率。This paper describes the design of a 2~6GHz 1W broadband high-efficiency power amplifier chip based on 0.15μm GaAs pHEMT process,and provides the results of fixture testing.The amplifier chip adopts a two-stage cascaded amplification structure to ensure high power gain,and is matched with a multi-stage LC structure to broaden the operating frequency band of the amplifier.At the same time,low insertion loss can maintain high efficiency and power of the amplifier.

关 键 词：电路设计 功率放大器芯片 宽带 高效率 级联结构 

分 类 号：TN722.75[电子电信—电路与系统]