GaAs低压高线性度驱动放大器芯片的设计  

Design of Low Voltage High Linearity Driver Amplifier Chip Base on GaAs

作　　者：王测天 郑其进 廖学介 羊洪轮 邓春 童伟 WANG Cetian;ZHENG Qijin;LIAO Xuejie;YANG Honglun;DENG Chun;TONG Wei(Chengdu Ganide Technology Co,Ltd.,Sichuan 610041,China;School of Microelectronics,Northwestern Polytechnical University,Shaanxi 710072,China)

机构地区：[1]成都嘉纳海威科技有限责任公司,四川610041 [2]西北工业大学微电子学院,陕西710072

出　　处：《电子技术（上海）》2024年第8期62-64,共3页Electronic Technology

摘　　要：阐述一款基于GaAs HBT工艺的0.4~1.1GHz宽带低压高线性度放大器芯片的设计,并给出在片测试结果。该芯片采用结合线性电容的有源偏置和并联负反馈技术,同时发射极增加镇流电阻,使放大器在工作频带范围内实现高线性度、低工作电压和较好的增益平坦度,同时减小工艺波动对放大器性能的影响。This paper describes a 0.4~1.1GHz broadband low-voltage hign linearity amplifier Chip based on GaAs HBT process and its onwafertest result.The chip uses active biasing and parallel negative feedback technology combined with libear capacitance,and a ballast resistor is added to the emitter to enable the amplifier to achieve high linearity,low operating voltage and good gain flatness within the operating frequency band,while reducing the effect of small process fluctuations on amplifier performance.

关 键 词：电路设计 宽带 低功耗 高线性度 有源偏置 

分 类 号：TN792[电子电信—电路与系统]