含孤立四面体基元的AMO_(4)型质子导体的研究进展  

Research Progress of AMO_(4)Based Proton Conductors Containing Isolated Tetrahedral Moieties

作　　者：耿鑫悦 杭高庆 欧长良 杨小燕 GENG Xinyue;HANG Gaoqing;OU Changliang;YANG Xiaoyan(Guangxi Key Laboratory of Optical and Electronic Materials and Devices,College of Materials Science and Engineering,Guilin University of Technology,Guilin 541004,Guangxi,China)

机构地区：[1]桂林理工大学材料科学与工程学院,广西光电材料与器件重点实验室,广西桂林541004

出　　处：《材料导报》2024年第22期100-106,共7页Materials Reports

基　　金：广西自然科学基金(2020GXNSFAA297050);国家自然科学基金(22005073,22365011);广西光电材料与器件重点实验室开放基金(20AA-1);桂林理工大学科研启动金(2017011)。

摘　　要：AMO_(4)(A=稀土元素,M=Nb,P,As,V…)氧化物因结构中含有灵活旋转和易变形的孤立MO 4四面体结构基元,有利于氧和质子的稳定和离子的长程迁移,是良好的无机固态离子导体候选体系。根据载流子种类可将无机固态离子导体主要分为氧离子导体和质子导体,与氧离子导体相比,质子导体具有较低的迁移能垒。本文首先概述了AMO_(4)型质子导体的晶体结构、导电性与受体掺杂剂对质子导电性的影响,以及部分结构中质子缺陷的稳定形式与离子迁移机制;然后总结了影响AMO_(4)型质子导体导电性、质子稳定及迁移的关键因素,包括A位和M位阳离子尺寸、MO 4四面体的畸变程度和相邻MO 4四面体氧离子之间的距离等;最后展望了AMO_(4)型质子导体未来的发展方向。AMO_(4)(A=rare earth element,M=Nb,P,As,V,etc.)based oxides are good candidates for inorganic solid-state ion conductors due to their structures features with isolated MO 4 tetrahedral moieties with rotation flexibility and great deformation,which facilitate oxygen and proton defects stabilization and ionic long-range migration.The inorganic solid-state ion conductors can be divided into oxygen ion conductors and proton conductors according to the charge carrier type.Compared with oxide ion conductors,proton conductors exhibit lower migration energy barrier.This paper firstly outlines the crystal structure,conductivity,and the effect of acceptor dopants on proton conductivity in AMO_(4)-based compositions.As well as the proton defects stabilization and migration mechanism in part of AMO_(4)structures.Then it summarizes the key factors affecting the conductivity,proton stabilization and migration in AMO_(4)based proton conductors,including cation size of A and M sites,distortion level of MO 4 tetrahedron and cationic distance between adjacent MO 4 tetrahedron.Finally,here prospects the future development direction of AMO_(4)based proton conductors.

关 键 词：AMO 4型质子导体 孤立四面体 缺陷稳定 离子迁移机制 构效关系 

分 类 号：TQ152[化学工程—电化学工业]