面向芯片静电放电问题的射频集成电路防护系统设计  

Design of RF integrated circuit protection system for chip electrostatic discharge problem

作　　者：黄新华 HUANG Xinhua(Mechanical and Electronic Engineering,Jingdezhen University,Jingdezhen 333000,Jiangxi Province,China)

机构地区：[1]景德镇学院机械电子工程学院,江西景德镇333000

出　　处：《电子元件与材料》2024年第9期1133-1140,共8页Electronic Components And Materials

基　　金：江西省教育厅科学技术项目(GJJ212823)。

摘　　要：旨在解决传统射频电路防护系统中存在的抗干扰能力不足和漏电量较大等问题,设计了一种可在静电放电保护的同时维持电路综合性能的射频集成电路防护系统。该系统包含一种改进式双结构电源钳位电路(两种类型化电路),利用综合控制电路和释放电路来处理静电放电脉冲。此外,选择超宽带低噪声放大器作为射频电路基体,并通过噪声相消技术对其进行改进,设计了噪音相消式超宽带低噪声放大器,通过精准检测并消除第一级金属氧化物半导体晶体管的沟道电流热噪声,实现信噪比的提升。仿真结果显示,所研究设计的双结构电源钳位电路在10,50和100 ns这三个快速上电时间均未出现误触发情况。其在输入匹配、输出匹配、增益和噪声系数方面表现出色,尤其是噪声系数在2.89~4.05 dB之间,增益在16.35~16.85 dB之间,功耗为2.1 mW,且寄生效应相对较小。由此可见,该防护系统不仅显著提升了电路的防护能力,还确保了电路的整体性能,为高性能与高防护能力的电路设计提供新的思路。The research aims to solve the problems of insufficient anti-interference ability and large leakage in traditional RF circuit protection systems.An RF integrated circuit protection system that can maintain the comprehensive performance of the circuit while protecting against electrostatic discharge was designed.The system included an improved dual structure power clamp circuit with two types of circuits,utilizing a comprehensive control circuit and a release circuit to process electrostatic discharge pulses.In addition,an ultra wideband low-noise amplifier was selected as the RF circuit substrate,and a noise cancellation type ultra wideband low-noise amplifier was improved and designed through noise cancellation technology.The signal-to-noise ratio was improved by accurately detecting and eliminating the channel current thermal noise of the first stage metal oxide semiconductor transistor.The simulation results show that the dual structure power clamp circuit designed in the study does not experience false triggering in the three fast power on time intervals of 10 ns,50 ns,and 100 ns.It performs well in the input matching,output matching,gain,and noise figure.Especially,the noise figure is between 2.89 dB and 4.05 dB,the gain is between 16.35 dB and 16.85 dB,the power consumption is 2.1 mW with relatively small parasitic effects.So the protection system not only significantly improves the protection capability of the circuit,but also ensures the overall performance of the circuit,which provides new ideas for the design of high-performance and high protection circuits.

关 键 词：集成电路 射频 静电放电 钳位电路 超宽带 

分 类 号：TN474.1[电子电信—微电子学与固体电子学]