0.1GHz~3GHz低噪声放大器设计  

Design of 0.1 GHz-3 GHz Low Noise Amplifier

作　　者：肖宝玉 王东东 王三路 蔡德龙 陈仲谋 吴奕蓬 XIAO Baoyu;WANG Dongdong;WANG Sanlu;CAI Delong;CHEN Zhongmou;WU Yipeng(Xi'an Bonray Intergrated Informaton Electronics Co.,Ltd.,Xi'an Shaanxi 710121,China)

机构地区：[1]西安博瑞集信电子科技有限公司,陕西西安710121

出　　处：《电子器件》2024年第5期1165-1168,共4页Chinese Journal of Electron Devices

基　　金：陕西省重点研发计划项目(2018ZDXM-GY-010,2017ZDXM-GY-004,2016KTCQ01-08);西安市集成电路重大专项项目(201809174CY3JC16);陕西省创新人才推进计划-科技创新团队项目(2020TD-019);陕西省教育厅重点科学研究项目(20JY059)。

摘　　要：基于共源共栅结构、并联负反馈和自适应有源偏置技术等设计了一款应用于0.1 GHz~3 GHz的宽带低噪声放大器。共源共栅(Cascode)结构削弱米勒(Miller)效应,提高高频增益;并联负反馈结构能够压低低频增益,改善带内增益平坦度,同时改变输入和输出阻抗,改善端口回波;自适应有源偏置技术提高电路输出功率1 dB压缩点,改善线性度。电路采用GaAs PHEMT工艺进行流片加工,测试结果表明:LNA的带内增益≥19.5 dB,增益平坦度≤±0.6 dB,噪声系数≤1.2 dB,输出1 dB压缩点≥20 dBm。Based on the cascode structure,parallel negative feedback structure and adaptive active bias technology,a wideband low noise 0.1 GHz-3 GHz amplifier is introduced.The common-source-common-gate structure is considered to weaken miller effect,and increase gain in high frequency.The parallel negative feedback structure can suppress the low-frequency gain to improve the in-band gain flatness,and change the input and output impedance to improve port echo.The adaptive active bias technology is utilized to increase output power 1dB compression point,then improve linearity of circuit.GaAs PHEMT process is used to tape out,the measurement results show that the in-band gain of the LNA is no less than 19.5 dB,the gain flatness is no bigger than±0.6 dB,the noise is no bigger than 1.2 dB,and the output 1 dB compression point is no less than 20 dBm.

关 键 词：宽带 自适应 低噪声放大器 

分 类 号：TN722.5[电子电信—电路与系统]