机构地区:[1]School of Physics,Xidian University,Xi’an 710071,People’s Republic of China [2]School of Advanced Materials and Nanotechnology,State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xidian University,Xi’an 710071,People’s Republic of China [3]School of Microelectronics,Xidian University,Xi’an 710071,People’s Republic of China [4]School of Telecommunication Engineering,Xidian University,Xi’an 710071,People’s Republic of China [5]MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary,School of Physical Science and Technology,Northwestern Polytechnical University,Xi’an 710072,People’s Republic of China [6]The Ministry of Education Key Laboratory of Micro and Nano Systems forAerospace,School of Mechanical Engineering,Northwestern PolytechnicalUniversity,Xi’an 710072,People’s Republic of China
出 处:《Nano-Micro Letters》2025年第1期528-547,共20页纳微快报(英文版)
基 金:financially supported by the National Natural Science Foundation of China(Grants nos.62201411,62371378,22205168,52302150 and 62304171);the China Postdoctoral Science Foundation(2022M722500);the Fundamental Research Funds for the Central Universities(Grants nos.ZYTS2308 and 20103237929);Startup Foundation of Xidian University(10251220001).
摘 要:Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies,as well as veiled dielectric-responsive character,are instrumental in electromagnetic dissipation.Conventional methods,however,constrain their delicate constructions.Herein,an innovative alternative is proposed:carrageenan-assistant cations-regulated(CACR)strategy,which induces a series of sulfides nanoparticles rooted in situ on the surface of carbon matrix.This unique configuration originates from strategic vacancy formation energy of sulfides and strong sulfides-carbon support interaction,benefiting the delicate construction of defects-rich heterostructures in M_(x)S_(y)/carbon composites(M-CAs).Impressively,these generated sulfur vacancies are firstly found to strengthen electron accumulation/consumption ability at heterointerfaces and,simultaneously,induct local asymmetry of electronic structure to evoke large dipole moment,ultimately leading to polarization coupling,i.e.,defect-type interfacial polarization.Such“Janus effect”(Janus effect means versatility,as in the Greek two-headed Janus)of interfacial sulfur vacancies is intuitively confirmed by both theoretical and experimental investigations for the first time.Consequently,the sulfur vacancies-rich heterostructured Co/Ni-CAs displays broad absorption bandwidth of 6.76 GHz at only 1.8 mm,compared to sulfur vacancies-free CAs without any dielectric response.Harnessing defects-rich heterostructures,this one-pot CACR strategy may steer the design and development of advanced nanomaterials,boosting functionality across diverse application domains beyond electromagnetic response.
关 键 词:Defects-rich heterointerfaces Sulfides Polarization coupling Electromagnetic wave absorption
分 类 号:TB332[一般工业技术—材料科学与工程]
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