An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance  

一种具有栅压调控各向异性电导的新型四元半导体纳米带

作　　者：Shaolong Jiang Fuchen Hou Shengfeng Zeng Yubo Zhang Erding Zhao Yilin Sun Liyun Zhao Cheng Zhang Mengyuan Jia Jun-Feng Dai Mingyuan Huang Qing Zhang Xiaolong Zou Yanfeng Zhang Junhao Lin 蒋绍龙;侯福臣;曾圣锋;张玉波;赵尔鼎;孙翊淋;赵丽云;张诚;贾梦源;戴俊峰;黄明远;张青;邹小龙;张艳锋;林君浩

机构地区：[1]Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China [2]Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong),Shenzhen 518045,China [3]Shenzhen Geim Graphene Center,Institue of Materials Research,Tsinghua Shenzhen International Graduate School,Tsinghua University,Shenzhen 518055,China [4]Minjiang Collaborative Center for Theoretical Physics,College of Physics and Electronic Information Engineering,Minjiang University,Fuzhou 350108,China [5]School of Integrated Circuits and Electronics,Beijing Institute of Technology,Beijing 100081,China [6]School of Materials Science and Engineering,Peking University,Beijing 100871,China [7]Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,China

出　　处：《Science Bulletin》2024年第20期3228-3236,共9页科学通报（英文版）

基　　金：supported by the National Natural Science Foundation of China(11974156,12304223,12304019,and 62104017);Guangdong Innovative and Entrepreneurial Research Team Program(2019ZT08C044);Shenzhen Science and Technology Program(KQTD20190929173815000 and 20200925161102001);the Science,Technology and Innovation Commission of Shenzhen Municipality(ZDSYS20190902092905285);Guangdong Natural Science Foundation(2021A1515010049)。

摘　　要：Two-dimensional noble transition metal chalcogenide(NTMC)semiconductors represent compelling building blocks for fabricating flexible electronic and optoelectronic devices.While binary and ternary compounds have been reported,the existence of quaternary NTMCs with a greater elemental degree of freedom remains largely unexplored.This study presents the pioneering experimental realization of a novel semiconducting quaternary NTMC material,AuPdNaS_(2),synthesized directly on Au foils through chemical vapor deposition.The ribbon-shaped morphology of the AuPdNaS_(2)crystal can be finely tuned to a thickness as low as 9.2 nm.Scanning transmission electron microscopy reveals the atomic arrangement,showcasing robust anisotropic features;thus,AuPdNaS_(2)exhibits distinct anisotropic phonon vibrations and electrical properties.The field-effect transistor constructed from AuPdNaS_(2)crystal demonstrates a pronounced anisotropic conductance(σ_(max)/σ_(min)=3.20)under gate voltage control.This investigation significantly expands the repertoire of NTMC materials and underscores the potential applications of AuPdNaS_(2)in nano-electronic devices.

关 键 词：AuPdNaS_(2) Chemical vapor deposition Gate tenability Anisotropic conductance 

分 类 号：TN304[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]