Recent progress of Ga_(2)O_(3)materials and devices based on the low-cost,vacuum-free Mist-CVD epitaxial growth method  

作　　者：Zeyulin Zhang Pengru Yan Qingwen Song Haifeng Chen Wentao Zhang Hao Yuan Fengyu Du Dinghe Liu Dazheng Chen Yuming Zhang 

机构地区：[1]Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory,School of Microelectronics,Xidian University,Xi'an 710071,China [2]Xidian-Wuhu Research Institute,Wuhu 241000,China [3]Key Laboratory of Advanced Semiconductor Devices and Materials,School of Electronic Engineering,Xi'an University of Posts and Telecommunications,Xi'an 710121,China [4]Guangxi Key Laboratory of Optoelectronic Information Processing,School of Optoelectronic Engineering,Guilin University of Electronic Technology,Guilin,541004,China

出　　处：《Fundamental Research》2024年第5期1292-1305,共14页自然科学基础研究（英文版）

基　　金：supported by the National Key R&D Program of China(2022YFB3605402);the National Natural Science Foundation of China(62274132,62004151,62274126);the Key Area R&D Program of Guangdong Province(2019B010127001,2020B010170001,2020B0909030003);the Natural Science Basic Research Program of Shaanxi under Program 2021JC-24,the Key Research and Development Program of Shaanxi(2021-GY-007);the Innovation Capability Support Program of Shaanxi(2021TD-04);the Key Research and Development Program of Shaanxi(2020ZDLGY03–07).

摘　　要：Compared with silicon,gallium nitride,silicon carbide,and other traditional semiconductors,gallium oxide(Ga_(2)O_(3))who possesses,an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers,especially for the potential application in power devices.Moreover,Ga_(2)O_(3)material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap.These future commercial applications put forward an urgent require for high-quality epitaxial Ga_(2)O_(3)material in an efficient growth method at a lower cost.Although there are some conventional methods for single crystal Ga_(2)O_(3)film epitaxial growth such as MBE and MOCVD,these methods always need a vacuum growth environment and expensive equipment.As a fast-growing method,Mist-CVD gives the growth of Ga_(2)O_(3)in a vacuum-free,process-simple,and low-cost method,which will greatly reduce the cost and facilitate the development of Ga_(2)O_(3).This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga_(2)O_(3),recent progress in the Ga_(2)O_(3)film epitaxial growth,and various device properties based on the Mist-CVD method.Our work aims to provide help for the development of Ga_(2)O_(3)material growth and device applications.

关 键 词：Gallium oxide Epitaxy growth Mist-CVD Single crystals Gallium oxide devices 

分 类 号：TN30[电子电信—物理电子学]