Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs  

作　　者：Baokang Peng Yanxin Jiao Haotian Zhong Zhao Rong Zirui Wang Ying Xiao Waisum Wong Lining Zhang Runsheng Wang Ru Huang 

机构地区：[1]School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China [2]School of Integrated Circuits,Peking University,Beijing 100871,China [3]Hisilicon Corporation,Shanghai 201700,China

出　　处：《Fundamental Research》2024年第5期1306-1313,共8页自然科学基础研究（英文版）

基　　金：supported in part by the Natural Science Foundation of China(62125401 and 62074006);the major scientific instruments and equipments development grant(61927901);the Shenzhen Fundamental Research Program(GXWD20200827114656001).

摘　　要：In this work,a surface-potential based compact model focusing on the quantum confinement effects of ultimately scaled gate-all-around(GAA)MOSFET is presented.Energy quantization with sub-band formation along the radius direction of cylindrical GAAs or thickness direction of nanosheet GAAs leads to significant quantization effects.An analytical model of surface potentials is developed by solving the Poisson equation with incorporating sub-band effects.In combination with the existing transport model framework,charge-voltage and current-voltage formulations are developed based on the surface potential.The model formulations are then extensively validated using TCAD numerical simulations as well as Si data of nanosheet GAA MOSFETs.Simulations of typical circuits verify the model robustness and convergence for its applications in GAA technology.

关 键 词：Gate-all-around FET Compact model Quantum mechanical confinement Nanosheet FET Nanowire FET Sub-band energy 

分 类 号：TB383[一般工业技术—材料科学与工程]