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作 者:Jie TANG Ziluo SU Shuang CAI Yalan WANG Luming WANG Jiaqi WU Jiaze QIN Jiankai ZHU Bo XU Juan XIA Zenghui WANG
机构地区:[1]Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054,China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China [3]State Key Lab of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
出 处:《Science China(Information Sciences)》2024年第10期389-390,共2页中国科学(信息科学)(英文版)
基 金:supported by National Key R&D Program of China (Grant No. 2022YFB3203600);Opening Foundation of Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices (Grant No. K202307);National Natural Science Foundation of China (Grant Nos. T2325007, 62450003, 62250073);China Postdoctoral Science Foundation (Grant Nos. GZB20230107, GZB20240109);Natural Science Foundation of Sichuan Province (Grant Nos. 2024NSFSC1430, 2024NSFSC1408)。
摘 要:Two-dimensional(2D) semiconductors offer a plethora of new opportunities for constructing novel nanodevices.Among them, rhenium diselenide(ReSe_(2), crystal structure in Figure 1(a)) stands out due to its unique interlayer coupling, which can improve homogeneity in device performances when combined with wafer scale growth.
关 键 词:FIGURE CONSTRUCTING INTERLAYER
分 类 号:TN751.2[电子电信—电路与系统]
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