Non-contact and non-destructive in-situ inspection for CdSe quantum dot film based on the principle of field-induced photoluminescence quenching  

基于场诱导光致发光猝灭原理的CdSe量子点薄膜的非接触无损原位检测

作　　者：Zheng Gong Wenhao Li Shuqian Zhang Junlong Li Hao Su Wei Huang Kun Wang Jiaye Zhu Xiongtu Zhou Yongai Zhang Tailiang Guo Chaoxing Wu 龚正;李文豪;张树钱;李俊龙;苏昊;黄伟;王堃;朱嘉烨;周雄图;张永爱;郭太良;吴朝兴(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China;Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China)

机构地区：[1]College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China [2]Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China

出　　处：《Science China Materials》2024年第11期3570-3578,共9页中国科学（材料科学）（英文版）

基　　金：financially supported by the National Key Research and Development Program of China(2021YFB3600400);Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Project(2020ZZ113 and 2021ZZ130)。

摘　　要：CdSe quantum-dot(QD)film,as the core function layer,plays a key role in various optoelectronic devices.The thickness uniformity of QD films is one of the key factors to determine the overall photoelectric performance.Therefore,it is important to obtain the thickness distribution of large-area QD films.However,it is difficult for traditional methods to quickly get the information related to its thickness distribution without introducing additional damage.In this paper,a non-contact and non-destructive inspection method for in-situ detecting the thickness uniformity of CdSe QD film is proposed.The principle behind this in-situ inspection method is that the photoluminescence quenching phenomenon of the QD film would occur under a high electric field,and the degree of photoluminescence quenching is related to the thickness of the quantum dot films.Photoluminescence images of the same QD film without and with an electric field are recorded by a charge-coupled device camera,respectively.By transforming the brightness distribution of these two images,we can intuitively see the thickness information of the thin film array of QD.The proposed method provides a meaningful inspection for the manufacture of QD based lightemitting display.CdSe量子点薄膜作为核心功能层,在各种光电器件中起着关键作用.量子点薄膜的厚度均匀性是决定其整体光电性能的关键因素之一.因此,获取大面积量子点薄膜的厚度分布十分重要.然而,传统的方法难以在不引入额外损伤的情况下快速获得其厚度分布的相关信息.本文提出了一种原位检测CdSe量子点薄膜厚度均匀性的非接触式无损检测方法.这种原位检测方法的原理基于量子点薄膜在高电场作用下的光致发光猝灭现象,通过检测猝灭程度获得量子点薄膜的厚度信息.使用相机分别记录同一量子点薄膜在无电场和有电场情况下的光致发光图像.通过对这两幅图像的亮度分布进行变换,可以直观地得到量子点薄膜阵列的厚度信息.该方法为量子点发光显示器的制造提供了一种新的检测手段.

关 键 词：non-contact inspection non-destructive inspection field-induced photoluminescence quenching quantum dots 

分 类 号：TB383.2[一般工业技术—材料科学与工程]