Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power  

作　　者：Shuiqing Li Qiangqiang Guo Heqing Deng Zhibai Zhong Jinjian Zheng LiXun Yang Jiangyong Zhang Changzheng Sun Zhibiao Hao Bing Xiong Yanjun Han Jian Wang Hongtao Li Lin Gan Lai Wang Yi Luo 

机构地区：[1]Department of Electronic Engineering,Tsinghua University,Beijing 100084,China [2]Anhui GaN Semiconductor Co.,Ltd.,Luan 237000,China

出　　处：《Journal of Semiconductors》2024年第11期13-17,共5页半导体学报（英文版）

基　　金：funded by the National Key Research and Development Program(Grant No.2023YFB4604400);the National Natural Science Foundation of China(Grant Nos.62225405,62350002,61991443);the Key R&D Program of Jiangsu Province;China(Grant No.BE2020004);the Collaborative Innovation Centre of Solid-State Lighting and EnergySaving Electronics。

摘　　要：Since Shuji Nakamura first demonstrated the nitride laser in 1996[1],the domain of semiconductor laser technology has undergone a period of remarkable growth[2,3].Al In Ga N-based diode lasers(LDs)have proven their exceptional capabilities across a spectrum of pivotal applications,including high-density data storage,laser displays,laser lighting,and quantum technology[4].

关 键 词：LASER DIODES EXCEEDING 

分 类 号：TN312.8[电子电信—物理电子学]