A novel approach for observing band gap crossings using the SIMS technique in Pb_(1-x)Sn_(x)Te  

作　　者：Zeinab Khosravizadeh Piotr Dziawa Sania Dad Andrzej Dabrowski Rafał Jakiela 

机构地区：[1]Institute of Physics,Polish Academy of Sciences,Aleja Lotnikow 32/46,Warsaw 02668,Poland

出　　处：《Journal of Semiconductors》2024年第11期51-57,共7页半导体学报（英文版）

摘　　要：This paper introduces a pioneering application of secondary ion mass spectrometry(SIMS)for estimating the electronic properties of Pb_(1-x)Sn_(x)Te,a compound categorized as a topological crystalline insulator.The proposed approach marks the first application of SIMS for such estimations and focuses on investigating variations in ionization probabilities and shifts in the energy distribution of secondary ions.The ionization probabilities are influenced by pivotal parameters such as the material's work function and electron affinity.The derivation of these parameters hinges upon the energy gap's positioning relative to the vacuum level for varying values of within the Pb_(1-x)Sn_(x)Te compound.The findings elucidate noteworthy alterations in SIMS signals,particularly near the critical point of band-gap closing.

关 键 词：SIMS TCI ionization probability work function Pb_(1-x)Sn_(x)Te band-gap closing 

分 类 号：O469[理学—凝聚态物理]