First demonstration of a self-aligned p-channel GaN back gate injection transistor  

作　　者：Yingjie Wang Sen Huang Qimeng Jiang Jiaolong Liu Xinhua Wang Wen Liu Liu Wang Jingyuan Shi Jie Fan Xinguo Gao Haibo Yin Ke Wei Xinyu Liu 

机构地区：[1]High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center,Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China [2]School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China [3]China School of Advanced Technology,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2024年第11期69-73,共5页半导体学报（英文版）

基　　金：supported in part by the National Key Research and Development Program of China under Grant2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208;Grant 62304252;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics。

摘　　要：In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.

关 键 词：GAN p-FETs SELF-ALIGNMENT back gate threshold hysteresis conductivity modulation 

分 类 号：TN322.8[电子电信—物理电子学]