Erratum:“Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser”[J.Semicond.,2023,44(10),102302]  

作　　者：Tianjiang He Suping Liu Wei Li Li Zhong Xiaoyu Ma Cong Xiong Nan Lin Zhennuo Wang 

机构地区：[1]National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2024年第11期99-100,共2页半导体学报（英文版）

摘　　要：The thickness and composition of the external laminae contain errors,leading to inaccuracies in the theoretical calculations and simulations associated with Fig.3,Fig.4,and Fig.5.However,as these theoretical calculations merely illustrate a trend and do not contradict the experimental results,a request for modification has been submitted.

关 键 词：MIXING quantum VACANCY 

分 类 号：TN248.4[电子电信—物理电子学] G23[文化科学]