GRID探测器的SiPM质子辐照研究  

Proton Irradiation of SensL MicroFJ-60035-TSV SiPM Arrays for GRID Mission

作　　者：王奇东 李琛 王迪[2] 潘晓凡 郑煦韬 曾鸣[1] WANG Qidong;LI Chen;WANG Di;PAN Xiaofan;ZHENG Xutao;ZENG Ming(Department of Engineering Physics,Tsinghua University,Beijing 100084,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China)

机构地区：[1]清华大学工程物理系,北京100084 [2]西北核技术研究所,西安710024

出　　处：《现代应用物理》2024年第4期34-39,共6页Modern Applied Physics

基　　金：“天格计划”得到清华大学校自主科研计划追光计划专项资助;清华-昆山学生创新创业人才培养合作协议的专项支持

摘　　要：使用100 MeV质子对SensL MicroFJ-60035-TSV SiPM进行地面辐照实验,得到了SiPM漏电流增长与质子注量的关系,漏电流增长率为每片SiPM 3.98×10^(-7)μA·cm^(-2),并与其他文章的地面辐照实验结果进行对比,验证了结果一致性;实验结果与GRID-02载荷在轨漏电流增长进行对比,在量级上一致,增长斜率低约40%,进一步定量分析需要详细讨论空间在轨辐射环境的粒子能谱与类型。此外,实验中还设置了开偏压与关偏压两种测试条件,探究了工作电压对SiPM辐照损伤可能的影响。In this paper,a ground irradiation experiment on SensL MicroFJ-60035-TSV SiPM using 100 MeV protons is conducted.The relationship between the SiPM dark current growth and the proton fluence is obtained,which is 3.98×10^(-7)(μA·cm^(-2))/chip,and the results are compared with ground irradiation experiments in other papers.The consistency of the results is verified.Comparing the experimental results with the in-orbit damage of the GRID-02,the dark current growth rate is about 40%lower.Two groups of SiPM,with bias on and off during irradiation,are set to explore the potential impact of operating voltage on SiPM irradiation damage.

关 键 词：辐照损伤 硅光电倍增管 天格计划 漏电流 空间项目 

分 类 号：TL81[核科学技术—核技术及应用] O571[理学—粒子物理与原子核物理]