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作 者:Qu Yang Shuhan Fan Haozhe Zhang Zhenhuang Su Xingyu Gao Hui Shen Mingkui Wang Xiu Gong
机构地区:[1]College of Physics,&Guizhou Province Key Laboratory for Photoelectrics Technology and Application,Guizhou University,Guiyang 550025,Guizhou,China [2]State Key Laboratory of Public Big Data,Guizhou University,Guiyang 550025,Guizhou,China [3]Shanghai Synchrotron Radiation Facility(SSRF),Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China [4]Wuhan National Laboratory for Optoelectronics,School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,Hubei,China
出 处:《Journal of Energy Chemistry》2024年第11期383-390,共8页能源化学(英文版)
基 金:financial support from the Natural Science Foundation of Guizhou Province (Grant No. ZK 2024-087);Natural Science Foundation of China (no. 22005071)。
摘 要:The proper bandgap and exceptional photostability enable CsPbI_(3) as a potential candidate for indoor photovoltaics(IPVs),but indoor power conversion efficiency(PCE) is impeded by serious nonradiative recombination stemming from challenges in incomplete DMAPbI_(3) conversion and lattice structure distortion.Here,the coplanar symmetric structu re of hexyl sulfide(HS) is employed to functionalize the CsPbI_(3) layer for fabricating highly efficient IPVs.The hydrogen bond between HS and DMAI promotes the conversion of DMAPbI_(3) to CsPbI_(3),while the copianar symmetric structure enhances crystalline order.Simultaneously,surface sulfidation during HS-induced growth results in the in situ formation of PbS,spontaneously creating a CsPbI_(3) N-P homojunction to enhance band alignment and carrier mobility.As a result,the CsPbI_(3)&HS devices achieve an impressive indoor PCE of 39.90%(P_(in):334.6 μW cm^(-2),P_(out):133.5 μW cm^(-2)) under LED@2968 K,1062 lux,and maintain over 90% initial PCE for 800 h at ^(3)0% air ambient humidity.
关 键 词:Perovskite indoor photovoltaics CsPbI_(3) Coplanar symmetric structure molecules Crystallization kinetics Hydrogen bond N-P homojunction
分 类 号:TB34[一般工业技术—材料科学与工程]
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