Doping PCBM with fullerene phosphinate derivatives enhances the interface energy alignment and synergistic passivation capability  

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作  者:Chengrong Wang Ling Liao Lisheng Fan Wenqi Ge Bing Fan Qi Huang Rufang Peng Bo Jin 

机构地区:[1]State Key Laboratory of Environment-friendly Energy Materials,Southwest University of Science and Technology,Mianyang 621010,Sichuan,China [2]Kunshan GCL Photoelectric Material Ltd.Co,Suzhou 215300,Jiangsu,China

出  处:《Journal of Energy Chemistry》2024年第11期656-662,共7页能源化学(英文版)

基  金:Natural Science Foundation of China (51972278);Outstanding Youth Science and Technology Talents Program of Sichuan (19JCQN0085);Open Project of State Key Laboratory of Environment-friendly Energy Materials (Southwest University of Science and Technology, 21fksy19)。

摘  要:Phenyl-C_(61)-butyric acid methyl ester(PCBM) serves as a common electron transport layer(ETL) in inverted p-i-n structure perovskite solar cells(IPSCs),yet energy barriers and insufficient passivation at the PCBM-perovskite interface hinder device effectiveness and durability.In this study,we present a series of novel Fullerene Phenylacid Ester Derivatives(FPEDs:FPP,FTPP,FDPP) incorporated into PCBM.Our investigations illustrate that FPEDs effectively act to passivate the perovskite surface by forming robust interactions with uncoordinated Pb^(2+) ions via the phosphine oxide groups present in their molecular structures,thereby enhancing the stability of the devices.Moreover,these additives elevate the energy level of the lowest unoccupied molecular orbital(LUMO) of ETL,diminish the electron injection barrier,and enhance the efficiency of interlayer electron transport.Incorporating FPEDs enhances ETL coverage on the perovskite layer,reducing leakage current significantly.Notably,Devices with PCBM/FTPP achieved a peak PCE of 23.62% and showed superior stability,maintaining 96,8% of the initial PCE after 500 h,while control devices retained merely 80.7% over the same period.

关 键 词:Inverted perovskite solar cells Fullerene Phosphonic Esters Synergistic Passivation Energy Level Matching 

分 类 号:TM914.4[电气工程—电力电子与电力传动]

 

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