Artificial afferent neurons based on the metal-insulator transition of VO_(2)  

作　　者：Jiayao CHEN Lei YIN Yue WANG Haolin WANG Dongke LI Deren YANG Xiaodong PI 

机构地区：[1]State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [2]Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,ZJU-Hangzhou Global Scientific and Technological Innovation Centre,Zhejiang University,Hangzhou 311215,China

出　　处：《Science China(Information Sciences)》2024年第11期343-349,共7页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.U22A2075,92364204,91964107,U20A20209);National Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005);Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200);Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012)。

摘　　要：Neuromorphic computing offers significant advantages in addressing data redundancy and enhancing system energy efficiency.Although extensive research has been conducted on pulsed neural networks and bionic sensors,the development of artificial electronic afferent neurons for low-energy information transfer remains limited.This study introduces an artificial afferent neuron comprising a vanadium dioxide(VO_(2))device,capacitor and resistor.The VO_(2)devices exhibit stable electrically induced metal-insulator transition(MIT).Leveraging the MIT of this device,we develop an artificial afferent neuron to transform constant or sinusoidal analog signals into pulsed voltage signals.The output frequency increases with the increase of the input voltage,mimicking the faster pulse outputs of biological afferent neurons in response to stronger stimuli.

关 键 词：vanadium dioxide metal-insulator transition artificial afferent neurons pulsed voltage signal output frequency 

分 类 号：TP18[自动化与计算机技术—控制理论与控制工程]