S波段GaN功放组件设计  

Design of S-band GaN Power Amplifier Module

作　　者：刘云刚 张坤 LIU Yungang;ZHANG Kun(Sichuan Province Engineering Research Center for Broadband Microwave Circuit High Density Integration,The 29th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所四川省宽带微波电路高密度集成工程研究中心,成都610036

出　　处：《电子工艺技术》2024年第6期11-14,共4页Electronics Process Technology

摘　　要：介绍了运用GaN功率封装管设计S波段双通道100 W固态功放组件的方法,对功放组件的射频链路,馈电网络,过流过热保护电路以及热设计进行了详细阐述。测试结果表明,组件在S波段输出功率100 W,效率达到40%以上,通过单片机和FPGA对功放组件进行实时过热保护以及过流保护,适应电子战系统的健康管理要求。A method to design S-Band dual channel 100 W solid state power amplifier module using the GaN power tube is introduced.The design of the module,such as the design of RF chain,the power supply network,the protection of overcurrent and overheat,the thermal design,is described.The test results show that the power module delivers 100 W power in the S-band,and more than 40% PAE.The module utilizes MCU and FPGA to achieved real-time overcurrent and overheat protect,which meets the health management of EW systems.

关 键 词：GaN功放 功率合成 保护电路 热设计 

分 类 号：TN602[电子电信—电路与系统]