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作 者:Yanyu Song Haitao Zhu Duo Liu Xiaoguo Song Hong Bian Wei Fu Danyang Lin Caiwang Tan Jian Cao
机构地区:[1]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China [2]Shandong Provincial Key Lab of Special Welding Technology,Harbin Institute of Technology at Weihai,Weihai 264209,China [3]Shandong Institute of Shipbuilding Technology,Harbin Institute of Technology at Weihai,Weihai 264209,China
出 处:《Journal of Materials Science & Technology》2024年第15期187-197,共11页材料科学技术(英文版)
基 金:supported by the National Natural Science Foun-dation of China(grant Nos.52275318 and 52175307);Taishan Scholars Foundation of Shandong Province(No.tsqn201812128);Shandong Natural Science Foundation(Nos.ZR2023JQ021 and ZR2023QE221);China Academy of Space Technology Innovation Foundation(No.CAST2022).
摘 要:A bonding approach based on laser surface modification was developed to address the poor bonding be-tween Si_(3)N_(4) ceramic and Cu.The bonding mechanism in Si_(3)N_(4)/Cu heterogeneous composite structure fabricated by laser modification-assisted bonding is examined by means of scanning/transmission elec-tron microscopy and thermodynamic analysis.In the bonding process under laser modification,atomic intermixing at the interface is confirmed,as a result of the enhanced diffusion assisted by the dissocia-tion of Si_(3)N_(4) ceramic by laser.The dissociating Si precipitations on the surface,as well as the formation of micro-pores interfacial structure,would be the key concept of the bonding,by which the seamless and robust heterointerfaces were created.By controlling the laser-modifying conditions,we can obtain a reli-able heterostructure via the optimization of the trade-off of the surface structure and bonding strength,as determined by the laser-modified surface prior to bonding.The maximum structure depth and S ratio at the Si_(3)N_(4) surface were produced at a laser power of 56 W,corresponding to the maximal shear strength of 15.26 MPa.It is believed that the further development of this bonding technology will advance power electronic substrate fabrication applied in high-power devices.
关 键 词:Silicon nitride Laser surface modification Interfacial microstructure Analytical modeling Mechanical properties
分 类 号:TN405[电子电信—微电子学与固体电子学] TG496[金属学及工艺—焊接]
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