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作 者:郑佳坤 曲杨 常玉春[1] ZHENG Jiakun;QU Yang;CHANG Yuchun(School of Integrated Circuits,Dalian University of Technology,Dalian 116024,CHN)
机构地区:[1]大连理工大学集成电路学院,辽宁大连116024
出 处:《半导体光电》2024年第5期720-725,共6页Semiconductor Optoelectronics
基 金:国家自然科学基金青年科学项目(62304030).
摘 要:基于TSMC 65 nm CMOS工艺,设计了一款基于双钳位技术,实现在宽电压范围下,满足高精度电流匹配电荷泵电路。双钳位技术可以避免使用轨对轨运放所带来的电路结构复杂化的问题,并且通过增加调节开关管和互补开关计数,有效地优化电荷共享、时钟馈通以及电荷注入等非理性效应对电路的影响。仿真结果表明,与传统电荷泵电路相比,在电源电压为1.2 V、电荷泵电流为50μA时,双钳位电荷泵电路的电流匹配度在0.2~1.0 V范围内可以保持在0.03%以内。Based on TSMC 65 nm CMOS technology,in this study,a double-clamp counting circuit is designed for a high-precision current matching charge pump circuit in a wide voltage range.The double-clamp technology avoids the complicated circuit structure caused by the rail-to-rail operation amplifier.Moreover,the influence of non-rational effects,such as charge sharing,clock feedthrough,and charge injection,on the circuit are effectively optimized by adding the count of the regulating switch tube and the complementary switch.The simulation results show that,compared with the traditional charge pump circuit,when the power supply voltage is 1.2 V and the charge pump current is 50μA,the power supply voltage is 1.2 V.The current matching degree of the double-clamp charge pump circuit can be maintained within 0.03%in the range of 0.2~1.0 V.
关 键 词:电荷泵 双钳位技术 电流失配 时钟馈通 电荷共享
分 类 号:TN911.8[电子电信—通信与信息系统]
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