Ultra-low loss silicon nitride becomes even cooler  

作　　者：Dawn T.H.Tan Xavier X.Chia 

机构地区：[1]Photonics Devices and Systems Group,Singapore University of Technology andDesign,Singapore,Singapore [2]institute of Microelectronics,Agency for Science Technology and Research(A*STAR),Singapore,Singapore

出　　处：《Light(Science & Applications)》2024年第10期1997-1999,共3页光（科学与应用)（英文版）

基　　金：D.T.H.T.acknowledges funding from the A^(*)STAR MTC Grant(M21K2c0119);Ministry of Education ACRF Tier 2 Grant(T2EP50121-0019);National Research Foundation Investigatorship(NRF-NRFI08-2022-0003);Quantum Engineering Programme 2.0 grant(NRF2022-QEP2-01-P08);A^(*)STAR Institute of Microelectronics(C220415015).

摘　　要：Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.

关 键 词：low BUDGET NITRIDE 

分 类 号：O61[理学—无机化学]