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作 者:Ana S.Sotirova Bangshan Sun Jamie D.Leppard Andong Wang Mohan Wang Andres Vazquez-Brennan David P.Nadlinger Simon Moser Alexander Jesacher Chao He Fabian Pokorny Martin J.Booth Christopher J.Ballance
机构地区:[1]University of Oxford,Department of Physics,Oxford Ox13PU,UK [2]University of Oxford,Department of Engineering Science,Oxford Ox13PJ,Uk [3]institute of Biomedical Physics,Medical University of Innsbruck,MullerstraBe 44,6020 Innsbruck,Austria
出 处:《Light(Science & Applications)》2024年第10期2179-2191,共13页光(科学与应用)(英文版)
基 金:supported by a UKRI FL Fellowship(MR/S03238X/1);the US Army Research Office(W911NF-20-1-0038);the UK EPSRC Hub in Quantum Computing and Simulation(EP/T001062/1);EPSRC Fellowship(EP/T00326X/1);Marie Curie Fellowship UKRI guarantee(EP/X024296/1);Austrian Science Fund(13984-N36).C.H.acknowledges St.John's College,Oxford for support through a Junior Research Fellowship.D.P.N.thanks Merton College,Oxford for the same.A.S.S.acknowledges funding from the JT Hamilton scholarship from Balliol College,Oxford.
摘 要:Individual optical addressing in chains of trapped atomic ions requires the generation of many small,closely spaced beams with low cross-talk.Furthermore,implementing parallel operations necessitates phase,frequency,and amplitude control of each individual beam.Here,we present a scalable method for achieving all of these capabilities using a high-performance integrated photonic chip coupled to a network of optical fibre components.The chip design results in very low cross-talk between neighbouring channels even at the micrometre-scale spacing by implementing a very high refractive index contrast between the channel core and cladding.Furthermore,the photonic chip manufacturing procedure is highly flexible,allowing for the creation of devices with an arbitrary number of channels as well as non-uniform channel spacing at the chip output.We present the system used to integrate the chip within our ion trap apparatus and characterise the performance of the full individual addressing setup using a single trapped ion as a light-field sensor.Our measurements showed intensity cross-talk below~10^(-3) across the chip,with minimum observed cross-talk as low as~10^(-5).
分 类 号:TN40[电子电信—微电子学与固体电子学]
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