Thin film ferroelectric photonic-electronic memory  

作　　者：Gong Zhang Yue Chen Zijie Zheng Rui Shao Jiuren Zhou Zuopu Zhou Leming Jiao Jishen Zhang Haibo Wang Qiwen Kong Chen Sun Kai Ni Jixuan Wu Jiezhi Chen Xiao Gong 

机构地区：[1]Department of Electrical and Computer Engineering,National University of Singapore,Singapore 119077,Singapore [2]Department of Microelectronic Engineering,Rochester Institute of Technology,Rochester,NY 14623,USA [3]School of Information Science and Engineering,Shandong University,Jinan 250100,China

出　　处：《Light(Science & Applications)》2024年第10期2251-2262,共12页光（科学与应用)（英文版）

基　　金：supported by the National Research Foundation(NRF)Singapore,under its Quantum Engineering Program 1.0 projects(QEP-P3);MOE Tier 1(A-8001168-00-00).

摘　　要：To reduce system complexity and bridge the interface between electronic and photonic circuits,there is a high demand for a non-volatile memory that can be accessed both electrically and optically.However,practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration.Here,we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator.We successfully demonstrate programming and erasing the memory using both electrical and optical methods,assisted by optical-to-electrical-to-optical conversion.The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4×10^(4) cycles.Furthermore,the multi-level storage capability is analyzed in detail,revealing stable performance with a raw bit-error-rate smaller than 5.9×10^(−2).This ground-breaking work could be a key technology enabler for future hybrid electronic-photonic systems,targeting a wide range of applications such as photonic interconnect,high-speed data communication,and neuromorphic computing.

关 键 词：RESONATOR ELECTRONIC FERROELECTRIC 

分 类 号：TN2[电子电信—物理电子学]