基于带隙基准的改进型像元共享CTIA红外读出电路设计  

Design of improved pixel sharing CTIA infrared readout circuit based on bandgap reference

作　　者：王坤[1] 关晓宁[1] 康智博 张凡[1,2] 张焱超 邓旭光 周峰[1] 芦鹏飞[1,2] WANG Kun;GUAN Xiaoning;KANG Zhibo;ZHANG Fan;ZHANG Yanchao;DENG Xuguang;ZHOU Feng;LU Pengfei(School of Integrated Circuits,Beijing University of Posts and Telecommunications,Beijing 100876,China;Zhejiang SuperMat Sen-Ray Optoelectronics Co.Ltd.,Ningbo 315412,China;Beijing Space Electromechanical Research Institute,Beijing 100081,China)

机构地区：[1]北京邮电大学集成电路学院,北京100876 [2]浙江超晶晟锐光电有限公司,宁波315412 [3]北京空间机电研究所,北京100081

出　　处：《激光技术》2024年第6期816-821,共6页Laser Technology

基　　金：河南省重点研发专项项目(231111210400)。

摘　　要：为了提高红外读出电路动态范围、增强红外成像质量,加入暗电流抑制模块电路,设计了一种四像元分时共享的电容反馈跨阻放大器(CTIA)和带隙基准源相互配合的高性能红外读出电路。通过带隙基准源产生两个基准电压586 mV和293 mV,其中293 mV基准电压值的温漂系数达到1.49×10-6/℃,可对分流管的栅极和源极提供稳定的电压偏置,实现对暗电流的精准撇除。结果表明,该电路可实现电流信号从10 pA~10 nA宽动态范围的积分电压读出,读出数据通过线性拟合,拟合优度R 2达到0.9992,说明电路性能良好。此研究未来可应用到线列和面阵的红外探测器中。In order to improve the dynamic range of the infrared readout circuit and enhance the quality of infrared imaging,a high-performance infrared readout circuit with a four-pixel time-sharing capacitive feedback transimpedance amplifier(CTIA)and a bandgap reference source were designed by adding a dark current suppression module circuit.Two reference voltages of 586 mV and 293 mV were generated by bandgap reference source.Among them,the temperature drift coefficient of the reference voltage value of 293 mV reaches 1.49×10-6/℃,which can provide stable voltage bias for the gate and source of the shunt tube to achieve accurate skim of the dark current.The results show that a wide dynamic range of integral voltage readout of current signals from 10 pA to 10 nA can be realized,and the readout data are fitted by a linear fit with a goodness of fit(R 2)of 0.9992,which indicates that the circuit performs well.This study can be applied in the future to linear array and focal plane array infrared detectors.

关 键 词：探测器 读出电路 暗电流抑制 像元共享 带隙基准 

分 类 号：TN215[电子电信—物理电子学] TN362