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作 者:马鹏飞 于磊[1,2] 王政 王鹏飞 张冶金[1,2] 潘教青 MA Pengfei;YU Lei;WANG Zheng;WANG Pengfei;ZHANG Yejin;PAN Jiaoqing(Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]中国科学院半导体研究所光电子材料与器件重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049
出 处:《激光技术》2024年第6期832-837,共6页Laser Technology
基 金:国家重点研发计划资助项目(2022YFB2804503);国家自然科学基金资助项目(62090053,61934007,62105324)。
摘 要:为了避免全硅光学相控阵(OPA)的输出光功率饱和现象以及氮化硅的低移相效率,采用硅与氮化硅相结合的设计思路,在实现高功率输入的同时保证了调相效率;此外,硅基集成OPA为了避免通道间的相互耦合所引起的相位噪声,波导间距大于半波长,导致栅瓣的存在,进而使得扫描范围受限,故采用硅波导作为天线前的输入波导,以减小阵元间距。结果表明,芯片最终实现了41°×7.4°的扫描范围以及10.7 dB的芯片损耗。该研究对于OPA芯片的进一步改进是有帮助的。In order to avoid the saturation phenomenon of output optical power of all silicon optical phased array(OPA)and the low phase shifting efficiency of silicon nitride,a design concept combining silicon and silicon nitride was adopted,which ensured the phase shifting efficiency while achieving high power input.In addition,in order to avoid phase noise caused by mutual coupling between channels,silicon-based integrated OPA had waveguide spacing greater than half wavelength,which led to the presence of gate lobes and limited the scanning range.To solve this problem,a silicon waveguide was used as the input waveguide in front of the antenna to reduce the array elements spacing.The results show that,the chip ultimately achieves a scanning range of 41°×7.4°and a chip loss of 10.7 dB.This study is helpful for further improvement of OPA chips.
分 类 号:TN256[电子电信—物理电子学]
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