负热淬灭对富受主型ZnO微米管光电性能的研究  

Effect of negative thermal quenching on optoelectronic properties of acceptor-rich ZnO microtubes

作　　者：潘永漫 闫胤洲[1] 张永哲 王强 蒋毅坚[1] PAN Yongman;YAN Yinzhou;ZHANG Yongzhe;WANG Qiang;JIANG Yijian(School of Physics and Optoelectronic Engineering,Beijing University of Technology,Beijing 100124,China;Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China;College of New Materials and Chemical Engineering,Beijing Institute of Petrochemical Technology,Beijing 102617,China)

机构地区：[1]北京工业大学物理与光电工程学院,北京100124 [2]北京工业大学信息学部,北京100124 [3]北京石油化工学院新材料与化工学院,北京102617

出　　处：《激光技术》2024年第6期838-845,共8页Laser Technology

基　　金：国家自然科学基金资助项目(12074019);北京市教委科技计划重点资助项目(KZ202110005002)。

摘　　要：为了研究ZnO本征缺陷种类与浓度对激子跃迁复合和载流子输运特性的影响,采用改进的光学气化过饱和析出法制备了本征富受主型ZnO(A-ZnO)微米管。通过氧气生长气氛实现了施主-受主对和中性受主束缚激子A 0X的浓度调控,揭示了缺陷浓度调控中间态能级产生负热淬灭效应的机制。结果表明,通过提高浅受主缺陷浓度以及提升中间态能级位置,可将A-ZnO微米管的电阻率下降7倍,紫外光响应时间缩短51%,实现了A-ZnO微米管的导电性增强和高效紫外探测。此研究结果为ZnO微纳结构半导体光电器件性能调控提供了新思路。The effect of intrinsic defect types and concentrations on the behaviors of exciton transitions and carrier transports in ZnO was investigated.The intrinsic acceptor-rich ZnO(A-ZnO)microtubes were grown by the developed optical vapor supersaturation precipitation.The oxygen growth carries gas(O 2)was used to realize the regulation of donor acceptor pair and neutral acceptor bound exciton A 0X concentrations.The negative thermal quenching phenomenon was attributed to the middle energy state dominated by the defect concentrations.The abundant shallow acceptor concentrations and the middle energy state shifting up result in the electrical resistivity reduction by 7 times and the response time decreasing by 51%compared with the A-ZnO microtubes grown in air,leading to the high-efficient ultraviolet detector with high electrical resistivity.The present work provides a novel platform to optimize ZnO-micro/nanostructures-based optoelectronic devices.

关 键 词：光电子学 负热淬灭 光致发光 紫外探测 

分 类 号：O433.4[机械工程—光学工程] TN36[理学—光学]