2维材料/Ⅳ族体材料异质结多光谱光晶体管  

Multi-spectral phototransistor based on 2-D materials/groupⅣbulk materials heterojunctions

作　　者：林光杨 蔡欣慰 李硕 汪建元 李成 LIN Guangyang;CAI Xinwei;LI Shuo;WANG Jianyuan;LI Cheng(Department of Physics,College of Physical Science and Technology,Xiamen University,Xiamen 361005,China)

机构地区：[1]厦门大学物理科学与技术学院物理学系,厦门361005

出　　处：《激光技术》2024年第6期856-866,共11页Laser Technology

基　　金：国家自然科学基金资助项目(62074134,62104205);国家重点研发计划资助项目(2018YFB2200103)。

摘　　要：多光谱探测在工业等很多领域有着重要应用,研制集多波段响应于一体的高性能宽谱光电探测器已成为光学成像技术发展的重要研究方向之一。简要介绍了当前宽谱探测器的研究进展,阐述了2维/3维混合维范德华异质结在宽光谱探测器研制的前景;总结了本课题组在2维过渡金属二硫化物/3维Ⅳ族体材料范德华异质结宽光谱光晶体管研制方面取得的一些进展,其中包括传统的NPN型、PNP型光晶体管以及基于肖特基结集电极的新型光晶体管,并对这些混合维光晶体管的应用前景进行了展望。Multi-spectral detection had significant applications in many fields of industry.High-performance broadband photodetectors integrating multi-band responses became one of the important research directions of optical imaging technology.Current research progress of broadband photodetectors was briefly introduced.The prospects of 2-D/3-D mix-dimensional van der Waals(VDW)heterojunctions in the development of broadband photodetectors were elaborated.Some progress of broadband phototransistors based on 2-D transition metal dichalcogenides/3-D groupⅣmaterials VDW heterojunctions by the research group,including traditional NPN-type,PNP-type phototransistors and emerging phototransistors with Schottky junction collectors were reviewed.Ultimately,the applications of these phototransistors were prospected.

关 键 词：探测器 光晶体管 范德华异质结 多光谱探测 2维材料 Ⅳ族材料 

分 类 号：TN304.054[电子电信—物理电子学] TH362[机械工程—机械制造及自动化]