SiC行业发展现状及主要申请人专利分析  

The development of SiC industry and patent analysis of main applicants

作　　者：陈春淳[1] 郑凯[1] 胡晓珊 王晓燕[1] 王富强 CHEN Chun-chun;ZHANG Kai;HU Xiao-shan;WANG Xiao-yan;WANG Fu-qiang(Patent Examination cooperation(Beijing)Center of the patent Office,CNIPA,Beijing 100160,China)

机构地区：[1]国家知识产权局专利局专利审查协作北京中心,北京100160

出　　处：《精细与专用化学品》2024年第11期5-7,10,共4页Fine and Specialty Chemicals

摘　　要：分析了碳化硅(SiC)行业发展现状以及美国Cree、日本丰田、日本住友电工和日本新日铁公司在该领域的专利布局情况。美国Cree公司是SiC领域国际“龙头老大”,掌握着本领域的核心专利;日本丰田公司在华专利大部分为液相法,且其关键点为“掺杂”;日本住友电工公司主要在日本本国进行专利布局,其申请的主要特点为参数限定;日本新日铁公司主要致力于对物理气相传输法(PVT)的研究,其专利申请的重点在于对籽晶的改进。The development status of the silicon carbide(SiC) industry and the patent layout of US Cree,Toyota Jidosha Kabushiki Kaisha,Sumitomo Electric Industries,Nippon Steel & Sumitomo Metal were analyzed.Cree USA,the international leader in the SiC field and held the core patents in this field.Most patents of Toyota Jidosha Kabushiki Kaisha in China were liquid phase method and their keyword was “Doping”.Sumitomo Electric Industries has mainly made patent layouts in Japan,and the main feature of its application was parameter limitation.Nippon Steel & Sumitomo Metal was mainly committed to the research of physical vapor transport(PVT) method,and its patent application focused on the improvement of seed crystal.

关 键 词：碳化硅(SiC) 专利 申请人 分析 布局 行业发展现状 

分 类 号：TQ163.4[化学工程—高温制品工业]