Pressure-Induced Structural Transition and Enhanced Photoelectric Properties of Tm_(2)S_(3)  

作　　者：Zhi-Wei Shen Zhong-Yan Wu Shao-Jie Wang He-Chong Wang Hong-Kai Li Jing Song Guo-Ying Gao Lin Wang Yong-Jun Tian 申志伟;邬中炎;王绍杰;王贺冲;李宏凯;宋静;高国英;王霖;田永君(Key Laboratory for Microstructural Material Physics of Hebei Province,School of Science,Yanshan University,Qinhuangdao 066004,China;Center for High Pressure Science(CHiPS),State Key Laboratory of Metastable Materials Science and Technology(MMST),Yanshan University,Qinhuangdao 066004,China)

机构地区：[1]Key Laboratory for Microstructural Material Physics of Hebei Province,School of Science,Yanshan University,Qinhuangdao 066004,China [2]Center for High Pressure Science(CHiPS),State Key Laboratory of Metastable Materials Science and Technology(MMST),Yanshan University,Qinhuangdao 066004,China

出　　处：《Chinese Physics Letters》2024年第11期77-86,共10页中国物理快报（英文版）

基　　金：mainly supported by the National Natural Science Foundation of China(Grant Nos.52288102,52090020,52022089,and 52372261)。

摘　　要：Rare earth sesquisulfides have drawn growing attention in photoelectric applications because of their excellent electronic and photoelectric properties upon compression.We investigate the structural,electrical,and photoelectric properties of Tm_(2)S_(3) under high pressure through electrical impedance,UV-vis absorption,Raman spectroscopy,x-ray diffraction,and photoelectric measurements.It is found that δ-Tm_(2)S_(3) transforms into high-pressure𝛼-phase around 5GPa,accompanied by a substantial reduction in atomic distance,bandgap,and resistivity.Consequently,the photocurrent density and responsivity of Tm_(2)S_(3) exhibit dramatic increase behavior,achieving five orders of magnitude enhancement in α-phase compared with the initial δ-Tm_(2)S_(3).Moreover,α-phase maintains a high photocurrent responsivity of three orders of magnitude after unloading.This work demonstrates significant enhancement of the photoelectric properties of Tm_(2)S_(3) by applying pressure,which paves the way for improving the performance of future photoelectric devices.

关 键 词：TRANSITION ELECTRICAL PHOTOELECTRIC 

分 类 号：O469[理学—凝聚态物理]