Effects of Thickness and Anisotropic Strain on Polarization Switching Properties of Sub-10nm Epitaxial Hf_(0.5)Zr_(0.5)O_(2)Thin Films  

作　　者：Kuan Liu Kai Liu Xingchang Zhang Jie Fang Feng Jin Wenbin Wu Chao Ma Lingfei Wang 刘宽;刘楷;张醒昌;方杰;金锋;吴文彬;马超;王凌飞(Hefei National Research Center for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei 230026,China;College of Materials Science and Engineering,Hunan University,Changsha 410082,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China)

机构地区：[1]Hefei National Research Center for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei 230026,China [2]College of Materials Science and Engineering,Hunan University,Changsha 410082,China [3]Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Chinese Physics Letters》2024年第11期221-232,共12页中国物理快报（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant Nos.2023YFA1406404 and 2020YFA0309100);the National Natural Science Foundation of China(Grant Nos.12074365,12374094,12304153,U2032218,and 11974326),the National Natural Science Foundation of China(Grant No.12274120);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-084);the Fundamental Research Funds for the Central Universities(Grant Nos.WK9990000102 and WK2030000035);Anhui Provincial Natural Science Foundation(Grant No.2308085MA15);Hefei Science Center CAS Foundation(Grant Nos.2021HSC-CIP017 and 2016HSC-IU06);the China Postdoctoral Science Foundation(Grant No.2022M713060)。

摘　　要：Doped HfO_(2)-based ferroelectric(FE)films are emerging as leading contenders for next-generation FE nonvolatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and robust ferroelectricity at nanoscale dimensions.Despite the considerable attention paid to the FE properties of HfO_(2)-based films in recent years,enhancing their polarization switching speed remains a critical research challenge.We demonstrate the strong ferroelectricity of sub-10nm Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films and show that the polarization switching speed of these thin films can be significantly affected by HZO thickness and anisotropically strained La_(0.67)Sr_(0.33)MO_(3)-buffered layer.Our observations indicate that the HZO thin film thickness and anisotropically strained La_(0.67)Sr_(0.33)MO_(3)layer influence the nucleation of reverse domains by altering the phase composition of the HZO thin film,thereby reducing the polarization switching time.Although the increase in HZO thickness and anisotropic compressive strain hinder the formation of the FE phase,they can enable faster switching.Our findings suggest that FE HZO ultrathin films with polar orthorhombic structures have broad application prospects in microelectronic devices.These insights into novel methods for increasing polarization switching speed are poised to advance the development of high-performance FE devices.

关 键 词：FERROELECTRIC ANISOTROPIC film 

分 类 号：O484.4[理学—固体物理]